H. Aoki, H. Kobayashi, T. Kamimura, T. Suzuki, A. Ochiai, Y. Seino, H. Takahashi, N. Takeshita, N. Môri
Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu 7 605-607 1998年 査読有り
Transport properties of P-andSb-doped Yb4As3 were measured. The electrical resistivity measurement ofYb4(As0.88Sb0.12)3 under various pressure up to 8 GPa was performed. These results were compared with that of pure Yb4As3 under high pressure. The substitution effect of Sb is very similar to the pressure effect, however, there is a big differencebetween them. This similarity strongly suggests that the mobility of the electron is much smaller compared to that of the hole, [pressure effect, Yb4As3, Yb4(As1-xSbx)3, Yb4(As1-x-Px)3. © 1998, The Japan Society of High Pressure Science and Technology. All rights reserved.