T. Seo, Y. Oka, K. Seo, K. Goto, H. Chibahara, H. Korogi, S. Suzuki, M. Hamada, N. Suzumura, K. Tsukamoto, A. Ueki, T. Furuhashi, D. Kodama, S. Kido, J. Izumitani, K. Tomita, E. Kobori, A. Ikeda, Y. Kawano, T. Ueda
2010 IEEE International Interconnect Technology Conference, IITC 2010 2010年 査読有り
We have improved ELK film so that it is suitable for the processes used in fabricating Cu interconnects without using a dielectric protection layer for CMP, the so called "direct CMP process". The depth profile of the pore size in the film was successfully controlled to prevent water absorption during the CMP process with a limited k-value increase in the film. The line-to-line dielectric breakdown voltage and the time dependent dielectric breakdown lifetime at the 45 nm spacing for the advanced ELK interconnects without the DPL were significantly improved. ©2010 IEEE.