HOTTA Y., MATSUI H., TABATA H., KAWAI T.
電子情報通信学会技術研究報告. ED, 電子デバイス, 98(591) 33-38, Feb, 2009
It is well researched that oxide ferroelectrics are suitable materials for non-volatile memory devices. To achieve an ideal structure of MFS-FET, it is required that oxide ferroelectrics deposit directly on the Si substrate which has high reactive properties. But there is serious problem that oxide layer, such as SiO_x, occurs at the interface between the films and Si-substrate. To get rid of this problem, we have demonstrated that the Chalcogenides, which is non-oxide materials and II-VI type semiconductors, are effective for this matter. The observed memory windows of (Zn,Cd)Se, (Zn,Cd)Te and Li-ZnO thin films are 0.25V, 0.2V and 0.18V, respectively.