森 英喜

Contactless capacitance transient techniques have been applied to local mapping of interface traps of a semiconductor wafer. In contactless capacitance transient techniques, a Metal-Air gap-Oxide-Semiconductor (MAOS) structure is used instead of a conventional Metal-Oxide-Semiconductor (MOS) structure. The local mapping of interface traps was obtained by using a contactless Isothermal Capacitance Transient Spectroscopy (ICTS), which is one of the contactless capacitance transient techniques. The validity of the contactless ICTS was demonstrated by characterizing a partially Au-doped Si wafer. The results revealed that local mapping of interface traps using contactless capacitance transient techniques is effective in wafer inspection and is a promising technique for the development of MOS devices and solar cells with high reliability and high performance. (C) 2016 Author(s).

In recent years, special interests have been paid to the advantage of using III-V compound semiconductors for the microelectronic and optoelectronic industries because of its high-speed response. Ion beam induced charge (IBIC) and transient-IBIC techniques are useful in order to investigate the single event effects, which is one of the most serious problems to use semiconductor devices in space. During image collection, the ion-induced damage is introduced. Therefore the degradation behavior of collected charge and transient current are important issue to use these techniques most effectively. To estimate degradation behavior, the damage factors of InGaAs devices are compared with that of Si devices by using the concept of non-ionizing energy loss. © 2003 Elsevier B.V. All rights reserved.

A single-event upset (SEU) is triggered when the amount of charge induced by an energetic ion striking a sensitive area exceeds a critical charge within a given time interval. An accurate understanding of the charge collection processes that give rise to SEU is critical for the design of SEU tolerant microelectronic devices. The best method for clearly examining charge collection during an SEU is to examine the ultra-fast current transient waveform. This is best achieved by a heavy-ion microbeam in combination with an ultra-fast sampling oscilloscope. In the past there have been numerous experiments aimed at directly measuring the ultra-fast current transient induced in various diodes by single ion strikes. The aim has been to examine the effect of charge collection components such as drift, funneling and diffusion on the SEU processes. In this paper, we present a summary of various experiments using the newly developed transient ion beam induced current system developed at JAERI. © 2003 Elsevier B.V. All rights reserved.