CVClient

森 英喜

モリ ヒデノブ  (Hidenobu Mori)

基本情報

所属
兵庫県立大学 大学院 工学研究科 電気物性工学専攻 助教
学位
博士(工学)(東海大学)

J-GLOBAL ID
200901074568383534
researchmap会員ID
5000049229

外部リンク

研究キーワード

 4

委員歴

 1

論文

 23
  • Hidenobu Mori, Haruhiko Yoshida
    2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 2023年11月16日  査読有り
  • Hidenobu Mori, Haruhiko Yoshida
    2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 2022年11月28日  査読有り
  • Hidenobu Mori, Haruhiko Yoshida
    IMFEDK 2018 - 2018 International Meeting for Future of Electron Devices, Kansai 2018年12月19日  
    Microscopic characterization of generation lifetimes in a SiO 2 /Si structure has been carried out using scanning capacitance microscopy (SCM). Generation lifetimes could be investigated by monitoring the capacitance transient due to inversion layer formation. The validity of local capacitance transient measurements by SCM was verified by comparing with the results of conventional capacitance transient measurements using a MOS capacitor. Furthermore, it was demonstrated that SCM can be used for imaging of the formation process of the inversion layer on a nanometer scale.
  • Haruhiko Yoshida, Hidenobu Mori
    AIP ADVANCES 6(10) 2016年10月  査読有り
    Contactless capacitance transient techniques have been applied to local mapping of interface traps of a semiconductor wafer. In contactless capacitance transient techniques, a Metal-Air gap-Oxide-Semiconductor (MAOS) structure is used instead of a conventional Metal-Oxide-Semiconductor (MOS) structure. The local mapping of interface traps was obtained by using a contactless Isothermal Capacitance Transient Spectroscopy (ICTS), which is one of the contactless capacitance transient techniques. The validity of the contactless ICTS was demonstrated by characterizing a partially Au-doped Si wafer. The results revealed that local mapping of interface traps using contactless capacitance transient techniques is effective in wafer inspection and is a promising technique for the development of MOS devices and solar cells with high reliability and high performance. (C) 2016 Author(s).
  • Shinobu Onoda, Toshio Hirao, Jamie Stuart Laird, Hidenobu Mori, Hisayoshi Itoh, Takeshi Wakasa, Tsuyoshi Okamoto, Yoshiharu Koizumi
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 210 232-236 2003年9月  査読有り
    In recent years, special interests have been paid to the advantage of using III-V compound semiconductors for the microelectronic and optoelectronic industries because of its high-speed response. Ion beam induced charge (IBIC) and transient-IBIC techniques are useful in order to investigate the single event effects, which is one of the most serious problems to use semiconductor devices in space. During image collection, the ion-induced damage is introduced. Therefore the degradation behavior of collected charge and transient current are important issue to use these techniques most effectively. To estimate degradation behavior, the damage factors of InGaAs devices are compared with that of Si devices by using the concept of non-ionizing energy loss. © 2003 Elsevier B.V. All rights reserved.

MISC

 22

講演・口頭発表等

 16

所属学協会

 3

共同研究・競争的資金等の研究課題

 2