田中 義人

Objective lenses are frequently employed in state-of-the-art ultrafast time-resolved microscopy techniques. While it enables tight spatial focusing, its dispersion causes a longer optical pulse duration. Since an objective lens is a combination of different lens materials, finding its correct dispersion can be challenging. In this paper, we propose a dispersion measurement method for an objective lens using white light interferometry. Our proposed method enables the experimental determination of the lens dispersion and improves the temporal resolution of ultrafast time-resolved microscopy techniques.

Abstract We have investigated the dependence of terahertz wave emissions on the internal electric field in undoped GaAs/n-type GaAs epitaxial structures irradiated by ultrashort laser pulses. The undoped layer has an electric field, the strength of which was controlled by the temperature in addition to the undoped layer thickness. We observed the electric field dependence of the terahertz waveform, and the results were explained by the calculation of the transient dynamics of electrons and phonons under electric fields. Furthermore, we indicated that the terahertz amplitude can be linearly controlled by the electric field strength in a wide electric field range.