中嶋誠二

ナカシマセイジ (Seiji Nakashima)

基本情報

所属: 兵庫県立大学大学院工学研究科電子情報工学専攻准教授

学位: 博士（工学）(2009年3月大阪大学)

J-GLOBAL ID: 201001021795659559
researchmap会員ID: 6000025936

外部リンク: http://www.eng.u-hyogo.ac.jp/eecs/eecs7/index_j.html

研究キーワード

研究分野

経歴

もっとみる

学歴

- 2009年

大阪大学基礎工学研究科システム創成専攻
- 1999年

姫路工業大学工学研究科電気系工学専攻

論文

Ultra-rapid cooling in the millisecond timescale for the enhancement of polarization properties in Al:HfO2 thin films using flash lamp annealing

Hideaki Tanimura, Tomoya Mifune, Yuma Ueno, Hironori Fujisawa, Seiji Nakashima, Ai I. Osaka, Shinichi Kato, Takumi Mikawa

Japanese Journal of Applied Physics 2024年12月13日
Corrigendum: “Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing” [Jpn. J. Appl. Phys. 63 09SP10 (2024)]

Hideaki Tanimura, Yuma Ueno, Tomoya Mifune, Hironori Fujisawa, Seiji Nakashima, Ai I. Osaka, Shinichi Kato, Takumi Mikawa

Japanese Journal of Applied Physics 2024年10月1日
Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing

Hideaki Tanimura, Yuma Ueno, Tomoya Mifune, Hironori Fujisawa, Seiji Nakashima, Ai I. Osaka, Shinichi Kato, Takumi Mikawa

Japanese Journal of Applied Physics 2024年9月2日
Intermediate multidomain state in single-crystalline Mn-doped BiFeO<inf>3</inf> thin films during ferroelectric polarization switching

Seiji Nakashima, Koji Kimura, Naohisa Happo, Artoni Kevin R. Ang, Yuta Yamamoto, Halubai Sekhar, Ai I. Osaka, Koichi Hayashi, Hironori Fujisawa

Scientific Reports 14 14358-1--9 2024年6月21日筆頭著者責任著者

A intermediate multidomain state and large crystallographic tilting of 1.78° for the (hh0)pc planes of a (001)pc-oriented single-domain Mn-doped BiFeO3 (BFMO) thin film were found when an electric field was applied along the [110]pc direction. The anomalous crystallographic tilting was caused by ferroelastic domain switching of the 109° domain switching. In addition, ferroelastic domain switching occurred via an intermediate multidomain state. To investigate these switching dynamics under an electric field, we used in situ fluorescent X-ray induced Kossel line pattern measurements with synchrotron radiation. In addition, in situ inverse X-ray fluorescence holography (XFH) experiments revealed that atomic displacement occurred under an applied electric field. We attributed the atomic displacement to crystallographic tilting induced by a converse piezoelectric effect. Our findings provide important insights for the design of piezoelectric and ferroelectric materials and devices.
Ozone-Assisted Hydrothermal Synthesis Method of Sb-Doped SnO2 Conductive Nanoparticles for Carbon-Free Oxygen-Reduction-Reaction Catalysts of Proton-Exchange-Membrane Hydrogen Fuel Cells

Takeshi Fukuda, Kenji Iimura, Takanori Yamamoto, Ryuki Tsuji, Maito Tanabe, Seiji Nakashima, Naoki Fukumuro, Seigo Ito

Crystals 14 462-1-20 2024年5月15日査読有り

もっとみる

MISC

強誘電体薄膜のバルク光起電力効果を用いた高電圧発生とそれを用いた光駆動アクチュエータ

中嶋誠二, 藤沢浩訓, 清水勝

岩谷直治記念財団研究報告書 42 2019年
強誘電体ナノワイヤキャパシタの作製 : 高集積強誘電体メモリへの応用を目指して (シリコン材料・デバイス)

藤沢浩訓, 清水勝, 中嶋誠二

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 116(118) 15-19 2016年6月29日
強誘電体を半導体として用いる新規デバイスを指向した単一ドメインBiFeO₃薄膜の電気伝導機構の解明

中嶋誠二, 藤沢浩訓, 清水勝

村田学術振興財団年報 (28) 2014年
Preparation and Characterization of High Quality Lead-free BiFeO3 Thin Films by Sputtering Process

Seiji Nakashima, Yusuke Takada, Taiki Ito, Syota Seto, Hironori Fujisawa, Masafumi Kobune, Masaru Shimizu

PROCEEDINGS OF THE 2012 FIFTH INTERNATIONAL CONFERENCE ON EMERGING TRENDS IN ENGINEERING AND TECHNOLOGY (ICETET 2012) 128-131 2012年

BiFeO3 (BFO) thin films have been prepared on SrTiO3 (001) single crystal substrates by sputtering process which is suitable for mass production. Domain structure can be controlled by off-cut angle and direction of SrTiO3 substrates. A lateral PFM and a XRD reciprocal space mapping results reveal the BFO thin film on SrTiO3 (001) with 4 degrees off-cut along [110] is single domain. The single domain BFO shows well-saturated ferroelectric D-E hysteresis loops at R.T.
Fabrication of PZT/ZnO Core-Shell Nanowires by Metalorganic Chemical Vapor Deposition

Hironori Fujisawa, Yuta Iwamoto, Seiji Nakashima, Masaru Shimizu

PROCEEDINGS OF THE 2012 FIFTH INTERNATIONAL CONFERENCE ON EMERGING TRENDS IN ENGINEERING AND TECHNOLOGY (ICETET 2012) 57-60 2012年

We report on fabrication of Pb(Zr,Ti)O-3 (PZT)/ZnO core-shell nanowires (NWs) on Pt/Ti/SiO2 membrane structure by metalorganic chemical vapor deposition (MOCVD). On the membrane structure, the diameter of ZnO NWs was smaller than those on Pt/Ti/SiO2/Si substrate. The growth temperature dependence of the diameter of ZnO NWs suggests that the difference in the diameter of ZnO NWs on the membrane and Pt/Ti/SiO2/Si substrate was caused by a lowering of the growth temperature on the membrane owing to insufficient heating. PZT was uniformly grown onto ZnO NWs on the membrane, and no distinct difference was observed in crystalline properties of PZT. These experimental results indicate that the crystalline properties of PZT/ZnO core-shell NWs on the membrane is as good as those on the surrounding area, and also open the door to novel NW-based piezoelectric vibration energy harvesters in combination with a mechanical resonance of "soft" substract.