研究者業績

藤井 俊治郎

フジイ シュンジロウ  (Shunjiro Fujii)

基本情報

所属
兵庫県立大学 工学研究科 准教授
学位
工学(大阪大学)

ORCID ID
 https://orcid.org/0000-0002-1684-959X
J-GLOBAL ID
201801021360580720
researchmap会員ID
B000299997

委員歴

 3

論文

 65
  • Shunjiro Fujii
    Key Engineering Materials 987 73-77 2024年3月  査読有り
  • Shunjiro Fujii, Shin-ichi Honda, Yoshihiro Oka, Yuki Kuwahara, Takeshi Saito
    Materials 16(2) 2023年1月  査読有り
    Single-wall carbon nanotubes (SWCNTs) are promising materials for electronic applications, such as transparent electrodes and thin-film transistors. However, the dispersion of isolated SWCNTs into solvents remains an important issue for their practical applications. SWCNTs are commonly dispersed in solvents via ultrasonication. However, ultrasonication damages SWCNTs, forming defects and cutting them into short pieces, which significantly degrade their electrical and mechanical properties. Herein, we demonstrate a novel approach toward the large-scale dispersion of long and isolated SWCNTs by using hydrodynamic cavitation. Considering the results of atomic force microscopy and dynamic light-scattering measurements, the average length of the SWCNTs dispersed via the hydrodynamic cavitation method is larger than that of the SWCNTs dispersed by using an ultrasonic homogenizer.
  • 森下 裕貴, 藤井 俊治郎, 本多 信一, 久保 利隆, 清水 哲夫
    表面と真空 65(9) 388-393 2022年9月10日  査読有り
  • Wei Li, Jeng Yu Ke, Yun Xuan Ou-Yang, Ying Xuan Lin, Ching Hwa Ho, Kuei Yi Lee, Shunjiro Fujii, Shin Ichi Honda, Hideaki Okado, Masamichi Naitoh
    Japanese Journal of Applied Physics 61(8) 2022年8月1日  査読有り
    The chemical vapor transport method was used in this research to synthesize MoS2 bulk. Through mechanical exfoliation, we limited the thickness of MoS2 flakes from 1 to 3 μm. In order to fabricate a p-n homogeneous junction, we used oxygen plasma treatment to transform the MoS2 characteristics from n-type to p-type to fabricate a p-n homogenous junction and demonstrate the charge neutrality point shift from −80 to +102 V successfully using FET measurement. The MoS2 p-n homogeneous junction diode showed an excellent p-n characteristic curve during the measurements and performed great rectifying behavior with 1-10 Vpp in the half-wave rectification experiment. This work demonstrated that MoS2 flake had great potential for p-n diodes that feature significant p-n characteristics and rectifying behavior.
  • Syusaku Nakamura, Wataru Nakamura, Shunjiro Fujii, Shin ichi Honda, Masahito Niibe, Mititaka Terasawa, Yuji Higo, Keisuke Niwase
    Diamond and Related Materials 123 2022年3月  査読有り
    To clarify the nature of defects presented in neutron (n)-irradiated highly oriented pyrolytic graphite (HOPG), in situ X-ray diffraction (XRD) observation at room temperature (RT) and high pressure was conducted with synchrotron radiation (SPring-8). We focused on the graphite (002) [G(002)] peak under compression to 18.1 GPa and also under decompression. For comparison, unirradiated HOPG was also placed in the same high-pressure cell. We found that the G(002) peak can be represented by two components, the S and L peaks, for the n-irradiated HOPG, whereas it can be represented by only one component for the unirradiated HOPG. The d-spacing for the n-irradiated and unirradiated HOPG samples gradually decreased with increasing pressure. At 18.1 GPa, the d-spacing of the S peak of the irradiated sample became almost the same as that of the unirradiated one, but that of the L peak was larger. Under decompression, the behavior of the d-spacing was almost opposite to that under compression, and the d-spacing was restored to its value before compression. Also, taking account of the changes in the peak widths, we referred to and considered irradiation-induced defects of interstitial-type defects existing between the basal planes and in-plane defects of dislocation dipoles as possible defects that affect the changes in the G(002) peak.

講演・口頭発表等

 7

共同研究・競争的資金等の研究課題

 7

産業財産権

 2