本多 信一

Abstract The chemical vapor transport method was used in this research to synthesize MoS₂ bulk. Through mechanical exfoliation, we limited the thickness of MoS₂ flakes from 1 to 3 μm. In order to fabricate a p–n homogeneous junction, we used oxygen plasma treatment to transform the MoS₂ characteristics from n-type to p-type to fabricate a p–n homogenous junction and demonstrate the charge neutrality point shift from −80 to +102 V successfully using FET measurement. The MoS₂ p–n homogeneous junction diode showed an excellent p-n characteristic curve during the measurements and performed great rectifying behavior with 1–10 V_pp in the half-wave rectification experiment. This work demonstrated that MoS₂ flake had great potential for p-n diodes that feature significant p–n characteristics and rectifying behavior.