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廣瀬 和之

ヒロセ カズユキ  (Kazuyuki Hirose)

基本情報

所属
国立研究開発法人宇宙航空研究開発機構 宇宙科学研究所 特任教授
学位
工学博士(早稲田大学)
工学修士
J-GLOBAL ID
200901096979972445
researchmap会員ID
1000192906

研究キーワード

 4

研究分野

 2

学歴

 2

委員歴

 14
もっとみる

受賞

 6
もっとみる

論文

 57
もっとみる

MISC

 351
  • 小林大輔, 廣瀬和之
    応用物理 92(2) 89-93 2023年2月  
  • Kazuyuki Hirose, Daisuke Kobayashi, Taichi Ito, Tetsuo Endoh
    JAPANESE JOURNAL OF APPLIED PHYSICS 56(8) 2017年8月  
    The memory reliability of magnetic tunnel junctions has been examined from the aspect of their potential use in disaster-resilient computing. This computing technology requires memories that can keep stored information intact even in power-cut emergency situations. Such a requirement has been quantified as a score of acceptable flip probability, which is the failure in time (FIT) rate of 1 for a single-interface perpendicular magnetic tunnel junction (p-MTJ) with a disk diameter of 20 nm. For comparison with this acceptable probability, p-MTJ memory reliability has been evaluated. The risk of particle radiation bombardments, i.e., alpha particles and neutrons-the well-known soft error sources on the ground-has been evaluated from the aspects of both frequency of bombardments and the hazardous effects of bombardments. This study highlights that high-energy terrestrial neutrons may lead to soft errors in p-MTJs, but the flip probability, or the risk, is expected to be lower than 1 x 10(-6) FIT/p-MTJ, which is much smaller than the target probability. It has also been found that the use of p-MTJs can reduce the risk by three orders of magnitude compared with that of the conventional SRAMs. Few risks have been suggested for other radiation particles, such as alpha particles and thermal neutrons. (C) 2017 The Japan Society of Applied Physics
  • 天野裕士, 天野裕士, 小林大輔, 野平博司, 廣瀬和之
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 62nd 2015年  
  • 廣瀬 和之, 小林 大輔
    応用物理 83(8) 655-659 2014年8月  
  • Takanobu Shimada, Hiroyuki Toyota, Kazuyuki Hirose, Yoshitomo Maeda, Kazuhisa Mitsuda
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) 2161-2165 2014年  
    This paper presents analysis results for the onorbit performance of a solar array paddle of the X-ray astronomy satellite Suzaku. The current generated by the solar array was decreasing significantly for approximate one year after mid-2011. We estimated the degradation of the output by simulating the on-orbit environment according to the JPL prediction method. The analysis results indicate that the on-orbit degradation of the solar array paddle is greater than the predicted performance degradation in a space environment. We determined that the difference between the on-orbit data and the analysis results could be attributed to either an increase in cell temperature or radiation degradation due to solar flares.
  • 柴田 優一, 小林 大輔, 大槻 真嗣, 牧野 高紘, 大島 武, 廣瀬 和之
    電子情報通信学会ソサイエティ大会講演論文集 2013(2) 88-88 2013年9月3日  
  • 星野 英二郎, 柴田 優一, 小林 大輔, 梯 友哉, 牧野 高紘, 大島 武, 廣瀬 和之車
    電子情報通信学会ソサイエティ大会講演論文集 2013(2) 99-99 2013年9月3日  
  • 梅田啓介, 梅田啓介, 岡田啓太郎, 岡田啓太郎, 小林大輔, 野平博司, 廣瀬和之
    応用物理学会秋季学術講演会講演予稿集(CD-ROM) 74th 2013年  
  • Keisuke Umeda, Yuji Amano, Daisuke Kobayashi, Hiroshi Nohira, Kazuyuki Hirose
    CDROM 41-42 2013年  
  • SHIMADA Takanobu, HIROSE Kazuyuki, KUKITA Akio, IKEDA Hirokazu, OHGUSHI Yoshio, OZAKI Masanobu, DOTANI Tadayasu, OKAZAKI Tsuyoshi, TAKAHASHI Tadayuki, NOZAKI Yukishige, MURAMATSU Takeshi, MIZUSHIMA Kazuyo
    電子情報通信学会技術研究報告. SANE, 宇宙・航行エレクトロニクス 112(229) 17-22 2012年10月3日  
    Japan Aerospace Exploration Agency (JAXA) has been developing an X-ray astronomy satellite named "ASTRO-H", which will be launched in 2014. This paper provides a summary of the design overview and development status of an electrical power subsystem for ASTRO-H. The subsystem consists of rigid solar array paddles that generate approximately 3500W at the end of life of the system, a power control unit that delivers an unregulated 50V bus power supply, shunt dissipators, battery charge control units, two 100-Ah Li-ion batteries, and a non-explosive actuator controller. Currently, manufacturing and verification tests for the satellite system have been implemented for the launch.
  • 梅田啓介, 梅田啓介, 岡田啓太郎, 岡田啓太郎, 小林大輔, 野平博司, 廣瀬和之
    応用物理学会学術講演会講演予稿集(CD-ROM) 73rd 2012年  
  • 廣瀬 和之, 服部 健雄
    應用物理 80(11) 942-947 2011年11月10日  
  • 齋藤 宏文, 廣瀬 和之
    日本航空宇宙学会誌 = Journal of the Japan Society for Aeronautical and Space Sciences 59(689) 175-183 2011年6月5日  
  • 黒田 能克, 石井 茂, 高橋 大輔, 木村 真一, 齋藤 宏文, 廣瀬 和之
    日本航空宇宙学会誌 = Journal of the Japan Society for Aeronautical and Space Sciences 59(688) 149-154 2011年5月5日  
  • Polona Skraba, Gvido Bratina, Satoru Igarashi, Hirosi Nohira, Kazuyuki Hirose
    THIN SOLID FILMS 519(13) 4216-4219 2011年4月  
    We have investigated the effect of In diffusion on the electronic structure of a polyethylenedioxythiophenepoly (styrenesulfonate) layer deposited on InSn(x)O(1-x) substrate by photoelectron spectroscopy. We observe additional states near the highest occupied molecular orbital of the polymer layer that are generated by In releases from the substrate. Also, we observe that In diffusion continues into an overlayer of a mixture of poly (3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester. On the basis of the results of the numerical line shape analysis of In 3d(5/2) core level emission, we rule out the presence of metallic In clusters within the organic layers and suggest instead that In/sulfur compounds are present within the organic layers. (C) 2011 Elsevier B.V. All rights reserved.
  • Polona Skraba, Gvido Bratina, Satoru Igarashi, Hirosi Nohira, Kazuyuki Hirose
    THIN SOLID FILMS 519(13) 4216-4219 2011年4月  
    We have investigated the effect of In diffusion on the electronic structure of a polyethylenedioxythiophenepoly (styrenesulfonate) layer deposited on InSn(x)O(1-x) substrate by photoelectron spectroscopy. We observe additional states near the highest occupied molecular orbital of the polymer layer that are generated by In releases from the substrate. Also, we observe that In diffusion continues into an overlayer of a mixture of poly (3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester. On the basis of the results of the numerical line shape analysis of In 3d(5/2) core level emission, we rule out the presence of metallic In clusters within the organic layers and suggest instead that In/sulfur compounds are present within the organic layers. (C) 2011 Elsevier B.V. All rights reserved.
  • 石原由梨, 五十嵐智, 小林大輔, 野平博司, 上野和良, 廣瀬和之
    応用物理学関係連合講演会講演予稿集(CD-ROM) 58th 2011年  
  • 石原由梨, 渋谷寧浩, 五十嵐智, 小林大輔, 野平博司, 上野和良, 廣瀬和之
    電子情報通信学会技術研究報告 111(114(SDM2011 50-70)) 2011年  
  • 嶋田貴信, 豊田裕之, 久木田明夫, 今泉充, 廣瀬和之, 小川博之, 前島弘則, 早川基, 田島道夫, 渡部浩一, 野崎幸重, 岡本章, 久松正, 島田啓二, 中村一世, 高本達也
    宇宙科学技術連合講演会講演集(CD-ROM) 55th 2011年  
  • 廣瀬和之
    結晶工学ニュース 85(46) 7-16 2011年  
  • 関洋, 澁谷寧浩, 野平博司, 小林大輔, 泰岡顕治, 廣瀬和之
    応用物理学会薄膜・表面物理分科会並びに応用物理学会シリコ ンテクノロジー分科会 127-130 2011年  
  • 澁谷寧浩, 小林大輔, 野平博司, 廣瀬和之
    第 16 回ゲートスタック 研究会 - 材料・プロセス・評価の物理 - 131-134 2011年  
  • 廣瀬和之, 齋藤宏文, 小林大輔, 黒田能克, 石井茂, 高橋大輔
    日本航空宇宙学会誌 59(684) 8-14 2011年  
  • 廣瀬和之, 齋藤宏文, 小林大輔, 黒田能克, 石井茂, 高橋大輔
    日本航空宇宙学会誌 59(684) 8-14 2011年  
  • 齋藤 宏文, 廣瀬 和之, 黒田 能克, 石井 茂
    電子情報通信学会技術研究報告. SANE, 宇宙・航行エレクトロニクス 110(308) 53-58 2010年11月19日  
    宇宙用途と民生用途のデュアルユースの半導体集積回路の技術的開発と設計生産体制が完成したので報告する.0.2μm完全空乏型SOIプロセスをべースに,回路技術により放射線耐性を付加させた.宇宙用途高温耐性や信頼性が必要な建設機器や,自動車などとの共用が考えられる.
  • 廣瀬 和之, 小林 大輔
    電子情報通信学会ソサイエティ大会講演論文集 2010 "SS-30"-"SS-31" 2010年8月31日  
  • V. Ferlet-Cavrois, D. Kobayashi, D. McMorrow, J. R. Schwank, H. Ikeda, A. Zadeh, O. Flament, K. Hirose
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 57(4) 1811-1819 2010年8月  
    Significant floating body effects were measured in 0.2 m fully-depleted SOI resulting in large amounts of single event transient (SET) broadening, i.e., SET duration stretching. The transient response of single transistors and the propagation of single-event transients (SET) in chains of logic gate (inverters and NOR gates) were investigated by using either heavy ion irradiation or focused laser pulses. Single transistors displayed a particularly slow recovery after an ion strike (>100 ns). In logic chains, large amounts of SET duration broadening, up to 30 ps/gate, were measured when the unattenuated rail-to-rail SET propagates to the output of the chain. These floating body effects occur mainly at low frequency. They are induced by the accumulation of majority carriers in the body region which contribute to reduce the threshold voltage of OFF-state transistors. This is a slow phenomenon which takes up to several tenths of a second to build-up. It is demonstrated that floating body effects are reduced when designed with body contacts or when the chain operates at high frequency.
  • V. Ferlet-Cavrois, D. Kobayashi, D. McMorrow, J. R. Schwank, H. Ikeda, A. Zadeh, O. Flament, K. Hirose
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 57(4) 1811-1819 2010年8月  
    Significant floating body effects were measured in 0.2 m fully-depleted SOI resulting in large amounts of single event transient (SET) broadening, i.e., SET duration stretching. The transient response of single transistors and the propagation of single-event transients (SET) in chains of logic gate (inverters and NOR gates) were investigated by using either heavy ion irradiation or focused laser pulses. Single transistors displayed a particularly slow recovery after an ion strike (>100 ns). In logic chains, large amounts of SET duration broadening, up to 30 ps/gate, were measured when the unattenuated rail-to-rail SET propagates to the output of the chain. These floating body effects occur mainly at low frequency. They are induced by the accumulation of majority carriers in the body region which contribute to reduce the threshold voltage of OFF-state transistors. This is a slow phenomenon which takes up to several tenths of a second to build-up. It is demonstrated that floating body effects are reduced when designed with body contacts or when the chain operates at high frequency.
  • K. Tsugawa, H. Noda, K. Hirose, H. Kawarada
    Physical Review B - Condensed Matter and Materials Physics 81(4) 045303 2010年1月8日  
    Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work. © 2010 The American Physical Society.
  • K. Tsugawa, H. Noda, K. Hirose, H. Kawarada
    Physical Review B - Condensed Matter and Materials Physics 81(4) 045303 2010年1月8日  
    Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the interface of the metal/hydrogen-terminated diamond is theoretically modeled including the carrier density of the surface conductive layer and the electron-affinity variation from the clean surface of the hydrogen-terminated diamond. Based on the model, a relation among the carrier density, the electron affinity variation, and the barrier heights are derived. The relation explains well experimental results of and other than the present work. © 2010 The American Physical Society.
  • 齋藤宏文, 廣瀬和之
    日本航空宇宙学会誌 58(683) 365-372 2010年  
  • 齋藤宏文, 廣瀬和之
    日本航空宇宙学会誌 58(683) 365-372 2010年  
  • 五十嵐智, 小林大輔, 野平博司, 廣瀬和之
    第 15 回ゲートスタック 研究会 - 材料・プロセス・評価の物理 - 193-196 2010年  
  • 服部健雄, 廣瀬和之
    結晶工学ニュース 83(44) 5-15 2010年  
  • 服部健雄, 廣瀬和之
    表面科学 31(1) 30-34 2010年  
    This article summarizes recent progress and current scientific understanding of atomic and/or electronic structures of ultrathin SiO<Sub>2</Sub> films and/or its interface with Si substrates in addition to the review of scientific achievements done in the past 30 years.
  • Tadayuki Takahashi, Kazuhisa Mitsuda, Richard Kelley, Felix Aharonian, Fumie Akimoto, Steve Allen, Naohisa Anabuki, Lorella Angelini, Keith Arnaud, Hisamitsu Awaki, Aya Bamba, Nobutaka Bando, Mark Bautz, Roger Blandford, Kevin Boyce, Greg Brown, Maria Chernyakova, Paolo Coppi, Elisa Costantini, Jean Cottam, John Crow, Jelle De Plaa, Cor De Vries, Jan Willem Den Herder, Michael DiPirro, Chris Done, Tadayasu Dotani, Ken Ebisawa, Teruaki Enoto, Yuichiro Ezoe, Andrew Fabian, Ryuichi Fujimoto, Yasushi Fukazawa, Stefan Funk, Akihiro Furuzawa, Massimiliano Galeazzi, Poshak Gandhi, Keith Gendreau, Kirk Gilmore, Yoshito Haba, Kenji Hamaguchi, Isamu Hatsukade, Kiyoshi Hayashida, Junko Hiraga, Kazuyuki Hirose, Ann Hornschemeier, John Hughes, Una Hwang, Ryo Iizuka, Kazunori Ishibashi, Manabu Ishida, Kosei Ishimura, Yoshitaka Ishisaki, Naoki Isobe, Masayuki Ito, Naoko Iwata, Jelle Kaastra, Timothy Kallman, Tuneyoshi Kamae, Hideaki Katagiri, Jun Kataoka, Satoru Katsuda, Madoka Kawaharada, Nobuyuki Kawai, Shigeo Kawasaki, Dmitry Khangaluyan, Caroline Kilbourne, Kenzo Kinugasa, Shunji Kitamoto, Tetsu Kitayama, Takayoshi Kohmura, Motohide Kokubun, Tatsuro Kosaka, Taro Kotani, Katsuji Koyama, Aya Kubota, Hideyo Kunieda, Philippe Laurent, François Lebrun, Olivier Limousin, Michael Loewenstein, Knox Long, Grzegorz Madejski, Yoshitomo Maeda, Kazuo Makishima, Maxim Markevitch, Hironori Matsumoto, Kyoko Matsushita, Dan McCammon, Jon Miller, Shin Mineshige, Kenji Minesugi, Takuya Miyazawa, Tsunefumi Mizuno, Koji Mori, Hideyuki Mori, Koji Mukai, Hiroshi Murakami, Toshio Murakami, Richard Mushotzky
    Proceedings of SPIE - The International Society for Optical Engineering 7732 77320Z 2010年  
    © 2010 SPIE. The joint JAXA/NASA ASTRO-H mission is the sixth in a series of highly successful X-ray missions initiated by the Institute of Space and Astronautical Science (ISAS). ASTRO-H will investigate the physics of the high-energy universe by performing high-resolution, high-throughput spectroscopy with moderate angular resolution. ASTRO-H covers very wide energy range from 0.3 keV to 600 keV. ASTRO-H allows a combination of wide band X-ray spectroscopy (5-80 keV) provided by multilayer coating, focusing hard X-ray mirrors and hard X-ray imaging detectors, and high energy-resolution soft X-ray spectroscopy (0.3-12 keV) provided by thin-foil X-ray optics and a micro-calorimeter array. The mission will also carry an X-ray CCD camera as a focal plane detector for a soft X-ray telescope (0.4-12 keV) and a non-focusing soft gamma-ray detector (40-600 keV). The micro-calorimeter system is developed by an international collaboration led by ISAS/JAXA and NASA. The simultaneous broad bandpass, coupled with high spectral resolution of ΔE ~7 eV provided by the micro-calorimeter will enable a wide variety of important science themes to be pursued.
  • S. Chikada, K. Hirose, T. Yamamoto
    Japanese Journal of Applied Physics 49(9) 091502-1-091502-3 2010年  
  • Related Phenomena
    K. Hirose 176(1-3) 46-51 2010年  
  • Tadayuki Takahashi, Kazuhisa Mitsuda, Richard Kelley, Felix Aharonian, Fumie Akimoto, Steve Allen, Naohisa Anabuki, Lorella Angelini, Keith Arnaud, Hisamitsu Awaki, Aya Bamba, Nobutaka Bando, Mark Bautz, Roger Blandford, Kevin Boyce, Greg Brown, Maria Chernyakova, Paolo Coppi, Elisa Costantini, Jean Cottam, John Crow, Jelle De Plaa, Cor De Vries, Jan Willem Den Herder, Michael DiPirro, Chris Done, Tadayasu Dotani, Ken Ebisawa, Teruaki Enoto, Yuichiro Ezoe, Andrew Fabian, Ryuichi Fujimoto, Yasushi Fukazawa, Stefan Funk, Akihiro Furuzawa, Massimiliano Galeazzi, Poshak Gandhi, Keith Gendreau, Kirk Gilmore, Yoshito Haba, Kenji Hamaguchi, Isamu Hatsukade, Kiyoshi Hayashida, Junko Hiraga, Kazuyuki Hirose, Ann Hornschemeier, John Hughes, Una Hwang, Ryo Iizuka, Kazunori Ishibashi, Manabu Ishida, Kosei Ishimura, Yoshitaka Ishisaki, Naoki Isobe, Masayuki Ito, Naoko Iwata, Jelle Kaastra, Timothy Kallman, Tuneyoshi Kamae, Hideaki Katagiri, Jun Kataoka, Satoru Katsuda, Madoka Kawaharada, Nobuyuki Kawai, Shigeo Kawasaki, Dmitry Khangaluyan, Caroline Kilbourne, Kenzo Kinugasa, Shunji Kitamoto, Tetsu Kitayama, Takayoshi Kohmura, Motohide Kokubun, Tatsuro Kosaka, Taro Kotani, Katsuji Koyama, Aya Kubota, Hideyo Kunieda, Philippe Laurent, François Lebrun, Olivier Limousin, Michael Loewenstein, Knox Long, Grzegorz Madejski, Yoshitomo Maeda, Kazuo Makishima, Maxim Markevitch, Hironori Matsumoto, Kyoko Matsushita, Dan McCammon, Jon Miller, Shin Mineshige, Kenji Minesugi, Takuya Miyazawa, Tsunefumi Mizuno, Koji Mori, Hideyuki Mori, Koji Mukai, Hiroshi Murakami, Toshio Murakami, Richard Mushotzky
    Proceedings of SPIE - The International Society for Optical Engineering 7732 77320Z 2010年  
    © 2010 SPIE. The joint JAXA/NASA ASTRO-H mission is the sixth in a series of highly successful X-ray missions initiated by the Institute of Space and Astronautical Science (ISAS). ASTRO-H will investigate the physics of the high-energy universe by performing high-resolution, high-throughput spectroscopy with moderate angular resolution. ASTRO-H covers very wide energy range from 0.3 keV to 600 keV. ASTRO-H allows a combination of wide band X-ray spectroscopy (5-80 keV) provided by multilayer coating, focusing hard X-ray mirrors and hard X-ray imaging detectors, and high energy-resolution soft X-ray spectroscopy (0.3-12 keV) provided by thin-foil X-ray optics and a micro-calorimeter array. The mission will also carry an X-ray CCD camera as a focal plane detector for a soft X-ray telescope (0.4-12 keV) and a non-focusing soft gamma-ray detector (40-600 keV). The micro-calorimeter system is developed by an international collaboration led by ISAS/JAXA and NASA. The simultaneous broad bandpass, coupled with high spectral resolution of ΔE ~7 eV provided by the micro-calorimeter will enable a wide variety of important science themes to be pursued.
  • Shunsuke Chikada, Kazuyuki Hirose, Tomoyuki Yamamoto
    JAPANESE JOURNAL OF APPLIED PHYSICS 49(9) 091502-1-091502-3 2010年  
    Fe-doped hexagonal-structured BaTiO3 is synthesized by the conventional solid-state reaction method. The local environment of the Fe ions doped in the synthesized hexagonal BaTiO3 is then investigated by X-ray absorption near edge structure (XANES) measurements and first-principles calculations. It is confirmed from the Fe L-2,L-3-edge XANES spectrum that the charge state of the Fe ions in the synthesized specimen is trivalent. By analyzing the Fe K-edge XANES spectrum of the present specimen with the aid of the first-principles calculations, it is found that doped Fe ions are substituted at the Ti site in Ti2O9 groups of face-sharing octahedra in hexagonal BaTiO3. (C) 2010 The Japan Society of Applied Physics
  • K. Hirose
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA 176(1-3) 46-51 2010年1月  
    We measure the binding energy E-b of the Si 2p core-level for Si substrates covered with thin (similar to 1 nm) SiO2 films as a function of X-ray irradiation time (XPS time-dependent measurement). We find that E-b, which correlates with band bending at the SiO2/Si interface, either increases or decreases as the X-ray irradiation time increases. We attribute this change to the trapping of carriers generated by photoelectron emission in the SiO2 films. We demonstrate that we can evaluate not only the number of traps but also the type of traps in SiO2 films by the XPS time-dependent measurement. We also discuss the nature of carrier trapping centers in SiO2 films on the basis of the complex changes in E-b observed during long-time X-ray irradiation. The measurement is utilized to evaluate a HfAlOx/Si system with unknown carrier-trapping centers of much larger quantity, which has been extensively studied as an alternative gate-dielectric structure in advanced metal-oxide-semiconductor field-effect transistors (MOSFETs). (C) 2009 Elsevier B.V. All rights reserved.
  • Takahiro Makino, Daisuke Kobayashi, Kazuyuki Hirose, Daisuke Takahashi, Shigeru Ishii, Masaki Kusano, Shinobu Onoda, Toshio Hirao, Takeshi Ohshima
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 56(6) 3180-3184 2009年12月  
    SET-induced soft-error rates (SER(SET)s) of logic LSIs are estimated from SET pulse-widths measured in logic cells used in logic LSIs. The estimated rates are consistent with directly measured SER(SET)s for logic LSIs.
  • Daisuke Kobayashi, Kazuyuki Hirose, Veronique Ferlet-Cavrois, Dale McMorrow, Takahiro Makino, Hirokazu Ikeda, Yasuo Arai, Morifumi Ohno
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 56(6) 3043-3049 2009年12月  
    An analytical model is developed to calculate the single-event transient (SET) pulse widths in advanced silicon-on-insulator (SOI) CMOS logic. Waveform analysis reveals that the width of the pulses is large enough to exhibit rail-to-rail trapezoidal waveforms, which are a typical shape for SET pulses in SOI CMOS logic irradiated by ions hitting the center of MOS gates at normal incidence, consisting of two time components. Based on their physical mechanisms, they are modeled as functions of the irradiation and device parameters. The widths and their trends predicted by the model are in good agreement with numerical device simulations and pulsed-laser experimental results.
  • Takahiro Makino, Daisuke Kobayashi, Kazuyuki Hirose, Daisuke Takahashi, Shigeru Ishii, Masaki Kusano, Shinobu Onoda, Toshio Hirao, Takeshi Ohshima
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 56(6) 3180-3184 2009年12月  
    SET-induced soft-error rates (SER(SET)s) of logic LSIs are estimated from SET pulse-widths measured in logic cells used in logic LSIs. The estimated rates are consistent with directly measured SER(SET)s for logic LSIs.
  • Daisuke Kobayashi, Kazuyuki Hirose, Veronique Ferlet-Cavrois, Dale McMorrow, Takahiro Makino, Hirokazu Ikeda, Yasuo Arai, Morifumi Ohno
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 56(6) 3043-3049 2009年12月  
    An analytical model is developed to calculate the single-event transient (SET) pulse widths in advanced silicon-on-insulator (SOI) CMOS logic. Waveform analysis reveals that the width of the pulses is large enough to exhibit rail-to-rail trapezoidal waveforms, which are a typical shape for SET pulses in SOI CMOS logic irradiated by ions hitting the center of MOS gates at normal incidence, consisting of two time components. Based on their physical mechanisms, they are modeled as functions of the irradiation and device parameters. The widths and their trends predicted by the model are in good agreement with numerical device simulations and pulsed-laser experimental results.
  • V. Ferlet-Cavrois, D. McMorrow, D. Kobayashi, N. Fel, J. S. Melinger, J. R. Schwank, M. Gaillardin, V. Pouget, F. Essely, J. Baggio, S. Girard, O. Flament, P. Paillet, R. S. Flores, P. E. Dodd, M. R. Shaneyfelt, K. Hirose, H. Saito
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 56(4) 2014-2020 2009年8月  
    A new technique is developed to measure precisely and accurately the width of propagating voltage transients induced by irradiation of inverter chains. The technique is based on measurement of the supply current in a detection inverter, and permits a direct determination of the transient width with a 50 GHz bandwidth.
  • Y. Yanagawa, D. Kobayashi, K. Hirose, T. Makino, H. Saito, H. Ikeda, S. Onoda, T. Hirao, T. Ohshima
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 56(4) 1958-1963 2009年8月  
    Irradiation test results demonstrate the validity of a scan FF technology for separately evaluating SET and SEU soft error rates (SERs) in logic VLSI systems. The SET and SEU soft errors mean the upset caused by latching an SET pulse that originates in combinational logic cell blocks and the upset caused by a direct ion hit to the FF, respectively. A test chip is fabricated using a 0.2-mu m fully-depleted silicon-on-insulator standard cell library and irradiated under an LET of 40 MeV-cm(2)/mg. The SET and SEU soft error rates are successfully measured by the scan FFs on the test chip. A theoretical SET SER estimation from measured SET-pulse widths is also experimentally validated.
  • V. Ferlet-Cavrois, D. McMorrow, D. Kobayashi, N. Fel, J. S. Melinger, J. R. Schwank, M. Gaillardin, V. Pouget, F. Essely, J. Baggio, S. Girard, O. Flament, P. Paillet, R. S. Flores, P. E. Dodd, M. R. Shaneyfelt, K. Hirose, H. Saito
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 56(4) 2014-2020 2009年8月  
    A new technique is developed to measure precisely and accurately the width of propagating voltage transients induced by irradiation of inverter chains. The technique is based on measurement of the supply current in a detection inverter, and permits a direct determination of the transient width with a 50 GHz bandwidth.
  • Y. Yanagawa, D. Kobayashi, K. Hirose, T. Makino, H. Saito, H. Ikeda, S. Onoda, T. Hirao, T. Ohshima
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE 56(4) 1958-1963 2009年8月  
    Irradiation test results demonstrate the validity of a scan FF technology for separately evaluating SET and SEU soft error rates (SERs) in logic VLSI systems. The SET and SEU soft errors mean the upset caused by latching an SET pulse that originates in combinational logic cell blocks and the upset caused by a direct ion hit to the FF, respectively. A test chip is fabricated using a 0.2-mu m fully-depleted silicon-on-insulator standard cell library and irradiated under an LET of 40 MeV-cm(2)/mg. The SET and SEU soft error rates are successfully measured by the scan FFs on the test chip. A theoretical SET SER estimation from measured SET-pulse widths is also experimentally validated.
  • Satoko Nakagawa-Toyota, Michio Tajima, Kazuyuki Hirose, Takeshi Ohshima, Hisayoshi Itoh
    JAPANESE JOURNAL OF APPLIED PHYSICS 48(3) 031201-1-031201-4 2009年3月  
    We analyzed light element impurities in ultrathin top Si layers of silicon-on-insulator (SOI) wafers by luminescence activation using electron irradiation. Photoluminescence (PL) analysis under ultraviolet (UV) light excitation was performed on various commercial SOI wafers after the irradiation. We detected the C-line related to a complex of interstitial carbon and oxygen impurities and the G-line related to a complex of interstitial and substitutional carbon impurities in the top Si layer with a thickness down to 62 nm after electron irradiation. We showed that there were differences in the impurity concentration depending on the wafer fabrication methods and also that there were variations in these concentrations in the respective wafers. Xenon ion implantation was used to activate top Si layers selectively so that we could confirm that the PL signal under the UV light excitation comes not from substrates but from top Si layers. The present method is a very promising tool to evaluate the light element impurities in top Si layers. (C) 2009 The Japan Society of Applied Physics

書籍等出版物

 8
もっとみる

講演・口頭発表等

 34
もっとみる

所属学協会

 1

共同研究・競争的資金等の研究課題

 16
もっとみる

● 指導学生等の数

 1
  • 年度
    2018年度(FY2018)
    博士課程学生数
    東大生　1名
    修士課程学生数
    東大生　2名
    受託指導学生数
    2名
    技術習得生の数
    3名

● 指導学生の表彰・受賞

 1
  • 指導学生名
    東口　紳太郎
    所属大学
    東京大学
    受賞内容（タイトル、団体名等）
    the 2017 RADECS sponsorship
    受賞年月日
    2017.10

● 指導学生の顕著な論文

 12
  • 指導学生名
    萩本賢哉
    所属大学
    東京大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    Y. Hagimoto, H. Fujioka, M. Oshima , and K. Hirose, Applied Physics Letters, 77(25), pp. 4175-4177 (2000)
    論文タイトル
    Characterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurements
    DOI
    http://doi.org/10.1063/1.1334657
  • 指導学生名
    榎本貴志
    所属大学
    名古屋大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    T. Emoto,, K. Akimoto, A. Ichimiya, K. Hirose, Applied Surface Science, 190(1-4), pp. 113-120 (2002)
    論文タイトル
    Strain due to nickel diffusion into hydrogen-terminated Si(1 1 1) surface
    DOI
    https://doi.org/10.1016/S0169-4332(01)00852-2
  • 指導学生名
    高橋健介
    所属大学
    武蔵工業大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    K. Takahashi, H. Nohira, K. Hirose, and T. Hattori, Applied Physics Letters 83(16), pp. 3422-3424 (2003)
    論文タイトル
    Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy
    DOI
    https://doi.org/10.1063/1.1616204
  • 指導学生名
    柳川善光
    所属大学
    東京大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    Y. Yanagawa, K. Hirose, H. Saito, D. Kobayashi, S. Fukuda, S. Ishii, D. Takahashi, K. Yamamoto, and Y. Kuroda, IEEE Transactions on Nuclear Science, 53 (6) pp. 3575-3578 (2006)
    論文タイトル
    Direct measurement of SET pulse widths in 0.2-μm SOI logic cells irradiated by heavy ions
  • 指導学生名
    牧野高紘
    所属大学
    総合研究大学院大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, and T. Ohshima, IEEE Transactions on Nuclear Science, 56 (1) pp. 202-207 (2009)
    論文タイトル
    LET dependence of single event transient pulse-widths in SOI logic cell
    DOI
    https://doi.org/10.1109/TNS.2008.2009054
  • 指導学生名
    津川和夫
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    K. Tsugawa, H. Noda, K. Hirose, and H. Kawarada, Physical Review B, 81 pp. 045303-1-0045303-11 (2010)
    論文タイトル
    Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond
    DOI
    https://doi.org/10.1103/PhysRevB.81.045303
  • 指導学生名
    近田旬佑
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    S. Chikada, K. Hirose, and T. Yamamoto, Japanese Journal of Applied Physics, 49 pp. 091502-1-091502-3 (2010)
    論文タイトル
    Analysis of local environment of Fe ions in hexagonal BaTiO3
    DOI
    https://doi.org/133.74.120.63 on 04/02/2021
  • 指導学生名
    金盛治人
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    H. Kanamori, T. Yoshioka, K. Hirose, and T. Yamamoto, Journal of Electron Spectroscopy and Related Phenomena, 185 pp. 129-132 (2012)
    論文タイトル
    Determination of valence state of Mn ions in Pr1-xAxMnO3-δ (A = Ca, Sr) by Mn-L3 X-ray absorption near-edge structure analysis
    DOI
    https://doi.org/10.1016/j.elspec.2012.03.003
  • 指導学生名
    元木啓介
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    K. Motoki, Y. Miyazawa, D. Kobayashi, M. Ikegami, T. Miyasaka, T. Yamamoto, and K. Hirose, Journal of Applied Physics, 121 (8) pp. 085501-1-085501-4 (2017)
    論文タイトル
    Degradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement method
    DOI
    https://doi.org/10.1063/1.4977238
  • 指導学生名
    井辻宏章
    所属大学
    東京大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    H. Itsuji, D. Kobayashi, O. Kawasaki, D. Matsuura, T. Narita, M. Kato, S. Ishii, K. Masukawa, and K. Hirose, IEEE Transactions on Nuclear Science, 65 (1) pp. 346-353 (2018)
    論文タイトル
    Laser visualization of the development of long line-type multi-cell upsets in back-biased SOI SRAMs
    DOI
    https://doi.org/10.1109/TNS.2017.2776169
  • 指導学生名
    山口記功
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    K. Yamaguchi, D. Kobayashi, T. Yamamoto, and K. Hirose, Physica B, 532 pp. 99-102 (2018)
    論文タイトル
    Theoretical investigation of the breakdown electric field of SiC polymorphs
    DOI
    https://doi.org/10.1016/j.physb.2017.03.042
  • 指導学生名
    チョン　チンハン
    所属大学
    東京大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    C-H. Chung, D. Kobayashi, and K. Hirose, IEEE Transactions on Device and Materials Reliability, 18 (4) pp. 574-582 (2018)
    論文タイトル
    Resistance-based modeling for soft errors in SOI SRAMs caused by radiation-induced potential perturbation under the BOX
    DOI
    https://doi.org/10.1109/TDMR.2018.2873220

● 専任大学名

 2
  • 専任大学名
    総合研究大学院大学（SOKENDAI)
  • 専任大学名
    東京大学（University of Tokyo)

● 所属する所内委員会

 8
  • 所内委員会名
    電子部品デバイス・電源グループ
  • 所内委員会名
    宇宙科学技術・専門統括
  • 所内委員会名
    宇宙科学基盤技術統括
  • 所内委員会名
    宇宙機応用工学研究系
  • 所内委員会名
    運営協議会委員
  • 所内委員会名
    知財委員
  • 所内委員会名
    研究所会議構成員
  • 所内委員会名
    宇宙工学委員会委員
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