Curriculum Vitaes
Profile Information
- Affiliation
- Professor, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency
- Degree
- (BLANK)(Waseda University)(BLANK)
- J-GLOBAL ID
- 200901096979972445
- researchmap Member ID
- 1000192906
Research Interests
4Research Areas
2Education
2-
- 1983
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- 1981
Committee Memberships
14Awards
6-
Apr, 2012
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Oct, 2010
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Mar, 2008
Papers
61-
Journal of Evolving Space Activities, 1, Apr, 2024 Peer-reviewed
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Journal of Evolving Space Activities, 1, Dec, 2023 Peer-reviewed
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IEEE Transactions on Nuclear Science, 1-1, 2023
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2022 IEEE International Reliability Physics Symposium (IRPS), Mar 27, 2022
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The Journal of Physical Chemistry C, 125(24) 13131-13137, Jun 24, 2021
Misc.
284-
宇宙航空研究開発機構特別資料 JAXA-SP-, (06-006), 2006
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宇宙科学技術連合講演会講演集(CD-ROM), 50th, 2006
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宇宙科学技術連合講演会講演集(CD-ROM), 50th, 2006
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宇宙科学技術連合講演会講演集(CD-ROM), 50th, 2006
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Time-domain component-analysis of heavy-ion-induced transient-currents in fully-depleted SOI MOSFETsProceedings of The7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA), 99-102, 2006
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Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology, 25-26, 2006
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X-ray photoelectron spectroscopy study on dielectric properties at gate insulator film/Si interfacesK. Hirose, H. Nohira, D. Kobayashi, and T. Hattori, 368-371, 2006
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IEIC Technical Report of IEICE, 2006
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Time-domain component-analysis of heavy-ion-induced transient-currents in fully-depleted SOI MOSFETsProceedings of The 7th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA), 99-102, 2006
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Extended Abstracts of 2006 International Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology, 25-26, 2006
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52(6) 2319-2325, Dec, 2005
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 52(6) 2104-2113, Dec, 2005
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European Space Agency, (Special Publication) ESA SP, (589) 173-178, 2005
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European Space Agency Specail Publication ESA SP (589), (589) 173-178, 2005
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 51(6) 3349-3353, Dec, 2004
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APPLIED SURFACE SCIENCE, 237(1-4) 411-415, Oct, 2004
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APPLIED SURFACE SCIENCE, 234(1-4) 202-206, Jul, 2004
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APPLIED SURFACE SCIENCE, 234(1-4) 202-206, Jul, 2004
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Technical report of IEICE. SDM, SDM2004-55(2004-06) 49-54, 2004We find that the Si2p photoelectron peak binding energy of a Si substrate covered with a 3-nm-thick HfAIO_x film increased to a saturation value during x-ray irradiation. This shift towards a higher binding energy indicates an increase in the amount of positive charges in the film, and the density of hole traps is estimated to be significantly higher than that in a SiO_2 film. There are negative charges already in the film before x-ray irradiation. Investigating changes of the C1s photoelectron peak binding energy originating from hydrocarbon adsorbed on the HfAIOx film surface gives us an insight into changes in the oxide electric field during the trapping.
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Proceedign of The International Symposium on Space Technology and Science, 1153-1158, 2004
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Proceedings of The 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application, 241-244, 2004
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2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 677-678, 2004
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Proceedings of The International Symposium on Space Technology and Science, 1153-1158, 2004
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K. Hirose, H. Saito, S. Fukuda, Y. Kuroda, S. Ishii, D. Takahashi, and K. Yamamoto, 241-244, 2004
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APPLIED PHYSICS LETTERS, 83(16) 3422-3424, Oct, 2003
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APPLIED PHYSICS LETTERS, 83(16) 3422-3424, Oct, 2003
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APPLIED SURFACE SCIENCE, 216(1-4) 351-355, Jun, 2003
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APPLIED SURFACE SCIENCE, 216(1-4) 351-355, Jun, 2003
Books and Other Publications
8Presentations
34-
33rd International Symposium on Space Technology and Science, 2022
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33rd International Symposium on Space Technology and Science, 2022
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International Symposium on Solar Energy and Efficient Energy Usage (11th SOLARIS 2021), Sep 29, 2021
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The 30th International Photovoltaic Science and Engineering Conference (PVCEC-30), Nov 11, 2020
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2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY- (IWDTF 2019), Nov 18, 2019
Professional Memberships
1Research Projects
16-
Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2017 - Mar, 2020
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2014 - Mar, 2017
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「未来社会実現のための ICT 基盤技術の研究開発」 「イノベーション 創出を支える情報基盤強化のための新技術開発」委託研究, 文部科学省, 2012 - 2016
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Grants-in-Aid for Scientific Research, Japan Society for the Promotion of Science, Apr, 2012 - Mar, 2015
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, 2009 - 2011
● 指導学生等の数
1-
Fiscal Year2018年度(FY2018)Doctoral program東大生 1名Master’s program東大生 2名Students under Commissioned Guidance Student System2名Students under Skills Acquisition System3名
● 指導学生の表彰・受賞
1-
Student NameShintaro ToguchiStudent affiliation東京大学Awardthe 2017 RADECS sponsorshipDate2017.10
● 指導学生の顕著な論文
12-
Student nameHagimoto YsuyukiStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)Y. Hagimoto, H. Fujioka, M. Oshima , and K. Hirose, Applied Physics Letters, 77(25), pp. 4175-4177 (2000)TitleCharacterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurementsDOIhttp://doi.org/10.1063/1.1334657
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Student nameEmoto TakashiStudent affiliation名古屋大学Author(s), journal, volume number, pagination (year of publication)T. Emoto,, K. Akimoto, A. Ichimiya, K. Hirose, Applied Surface Science, 190(1-4), pp. 113-120 (2002)TitleStrain due to nickel diffusion into hydrogen-terminated Si(1 1 1) surfaceDOIhttps://doi.org/10.1016/S0169-4332(01)00852-2
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Student nameTalahashi KensukeStudent affiliation武蔵工業大学Author(s), journal, volume number, pagination (year of publication)K. Takahashi, H. Nohira, K. Hirose, and T. Hattori, Applied Physics Letters 83(16), pp. 3422-3424 (2003)TitleAccurate determination of SiO2 film thickness by x-ray photoelectron spectroscopyDOIhttps://doi.org/10.1063/1.1616204
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Student nameYanagawa YoshimitsuStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)Y. Yanagawa, K. Hirose, H. Saito, D. Kobayashi, S. Fukuda, S. Ishii, D. Takahashi, K. Yamamoto, and Y. Kuroda, IEEE Transactions on Nuclear Science, 53 (6) pp. 3575-3578 (2006)TitleDirect measurement of SET pulse widths in 0.2-μm SOI logic cells irradiated by heavy ions
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Student nameMakino TakahiroStudent affiliation総合研究大学院大学Author(s), journal, volume number, pagination (year of publication)T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, and T. Ohshima, IEEE Transactions on Nuclear Science, 56 (1) pp. 202-207 (2009)TitleLET dependence of single event transient pulse-widths in SOI logic cellDOIhttps://doi.org/10.1109/TNS.2008.2009054
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Student nameTsugawa KazuoStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)K. Tsugawa, H. Noda, K. Hirose, and H. Kawarada, Physical Review B, 81 pp. 045303-1-0045303-11 (2010)TitleSchottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamondDOIhttps://doi.org/10.1103/PhysRevB.81.045303
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Student nameChikada ShunsukeStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)S. Chikada, K. Hirose, and T. Yamamoto, Japanese Journal of Applied Physics, 49 pp. 091502-1-091502-3 (2010)TitleAnalysis of local environment of Fe ions in hexagonal BaTiO3DOIhttps://doi.org/133.74.120.63 on 04/02/2021
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Student nameKanamori HarutoStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)H. Kanamori, T. Yoshioka, K. Hirose, and T. Yamamoto, Journal of Electron Spectroscopy and Related Phenomena, 185 pp. 129-132 (2012)TitleDetermination of valence state of Mn ions in Pr1-xAxMnO3-δ (A = Ca, Sr) by Mn-L3 X-ray absorption near-edge structure analysisDOIhttps://doi.org/10.1016/j.elspec.2012.03.003
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Student nameMotoki KeisukeStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)K. Motoki, Y. Miyazawa, D. Kobayashi, M. Ikegami, T. Miyasaka, T. Yamamoto, and K. Hirose, Journal of Applied Physics, 121 (8) pp. 085501-1-085501-4 (2017)TitleDegradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement methodDOIhttps://doi.org/10.1063/1.4977238
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Student nameItsuji HiroakiStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)H. Itsuji, D. Kobayashi, O. Kawasaki, D. Matsuura, T. Narita, M. Kato, S. Ishii, K. Masukawa, and K. Hirose, IEEE Transactions on Nuclear Science, 65 (1) pp. 346-353 (2018)TitleLaser visualization of the development of long line-type multi-cell upsets in back-biased SOI SRAMsDOIhttps://doi.org/10.1109/TNS.2017.2776169
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Student nameYamaguchi KikouStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)K. Yamaguchi, D. Kobayashi, T. Yamamoto, and K. Hirose, Physica B, 532 pp. 99-102 (2018)TitleTheoretical investigation of the breakdown electric field of SiC polymorphsDOIhttps://doi.org/10.1016/j.physb.2017.03.042
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Student nameChung Chin-HanStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)C-H. Chung, D. Kobayashi, and K. Hirose, IEEE Transactions on Device and Materials Reliability, 18 (4) pp. 574-582 (2018)TitleResistance-based modeling for soft errors in SOI SRAMs caused by radiation-induced potential perturbation under the BOXDOIhttps://doi.org/10.1109/TDMR.2018.2873220
● 専任大学名
2-
Affiliation (university)総合研究大学院大学(SOKENDAI)
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Affiliation (university)東京大学(University of Tokyo)
● 所属する所内委員会
8-
ISAS Committee電子部品デバイス・電源グループ
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ISAS Committee宇宙科学技術・専門統括
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ISAS Committee宇宙科学基盤技術統括
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ISAS Committee宇宙機応用工学研究系
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ISAS Committee運営協議会委員
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ISAS Committee知財委員
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ISAS Committee研究所会議構成員
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ISAS Committee宇宙工学委員会委員