Profile Information
- Affiliation
- Professor, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency
- Degree
- (BLANK)(Waseda University)(BLANK)
- J-GLOBAL ID
- 200901096979972445
- researchmap Member ID
- 1000192906
Research Interests
4Research Areas
2Education
2-
- 1983
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- 1981
Committee Memberships
14Awards
6-
Apr, 2012
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Oct, 2010
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Mar, 2008
Papers
61-
Journal of Evolving Space Activities, 1, Apr, 2024 Peer-reviewed
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Journal of Evolving Space Activities, 1, Dec, 2023 Peer-reviewed
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IEEE Transactions on Nuclear Science, 1-1, 2023
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2022 IEEE International Reliability Physics Symposium (IRPS), Mar 27, 2022
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The Journal of Physical Chemistry C, 125(24) 13131-13137, Jun 24, 2021
Misc.
284-
Ordering at Surface and Interfaces, Springer Series in Materials Science, A. Yoshimori, T. Sinjo, and H. Watanabe (eds), Springer-Verlag,, 17 329-335, 1992
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Ordering at Surface and Interfaces, Springer Series in Materials Science, A. Yoshimori, T. Sinjo, and H. Watanabe (eds), Springer-Verlag, 17 337-342, 1992
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Technical Digest (Cat. No.92CH3211-0), 289-292, 1992
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Ordering at Surface and Interfaces, Springer Series in Materials Science 17, A. Yoshimori, T. Sinjo, and H. Watanabe (eds), Springer-Verlag, 329-335, 1992
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Ordering at Surface and Interfaces, Springer Series in Materials Science 17, A. Yoshimori, T. Sinjo, and H. Watanabe (eds), Springer-Verlag, 337-342, 1992
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 30(12B) 3741-3743, Dec, 1991The energy distributions of the occupied surface states of GaAs (001) surfaces are measured using photoemission yield spectroscopy. The surfaces are prepared by different kinds of techniques, including molecular beam epitaxy, As decapping, and chemical etching. The surface states are found to change in both distribution and density depending on the surface preparation techniques. The origins of the surface states are discussed in terms of surface atomic structures for the atomically clean surfaces. A great reduction by about one order of magnitude in the density of the surface states is revealed for the surface covered with native oxide compared with the other atomically clean surfaces: the surface state electron density is estimated to be about 3 x 10(13) cm-2 for the latter, and approximately 10(12) cm-2 for the former.
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APPLIED PHYSICS LETTERS, 59(19) 2403-2405, Nov, 1991Al/GaAs Schottky barriers are fabricated with 2.5-20-angstrom thick doping layers of Ce of concentrations 10(20) cm-3 and 10(21) cm-3 situated below the GaAs surface. Schottky barrier heights (SBHs) are determined from current- and capacitance-voltage measurements. n-type SBHs decrease with increasing Ce doping layer thickness, while p-type SBHs increase, but to a lesser degree. A cross-sectional image taken by high-resolution transmission electron microscopy shows that Ce is located in the substitutional sites of the doping layers. The changes in the SBHs are attributed to strain induced by Ce atoms in the substitutional sites. The difference in the magnitudes of change observed for n- and p-type SBHs is discussed in relation to the inhomogeneity observed in the density of Ce atoms at the interface regions.
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PHYSICAL REVIEW B, 43(5) 4538-4540, Feb, 1991The interfacial superstructures of Sb/GaAs(001) contacts are observed by use of the grazing-incidence x-ray-diffraction method. The Schottky-barrier heights for these contacts are also determined by using the current-voltage or the capacitance-voltage methods. The Schottky-barrier height of the contact with the (1x6) interfacial superstructure is found to be larger than that of the contact with the (1x4) interfacial superstructure by as much as 0.1 eV. This result indicates the importance of the local electronic structure for Schottky-barrier formation at the metal-GaAs interfaces. The present results are discussed in connection with the current Schottky-barrier models.
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Physical Review B, 44(4) 1622-1627, 1991Different 4×1 superstructures are found for Yb/GaAs(001) contacts with different Yb thicknesses. To clarify the role of Yb atoms in the 4×1 structure, an x-ray anomalous-dispersion effect has been used in the grazing-incidence x-ray-diffraction geometry. Diffraction intensities measured in the x-ray energy range near the Yb LIII absorption edge show a characteristic variation, which reflects the energy dependence of the real part of the anomalous scattering factor (f) for Yb atoms. As a result, for all the samples, Yb atoms are found to order in 4×1 structures. The arrangements of the Yb atoms in the 4×1 unit cell are derived from Buergers decomposition method of the Patterson function. By comparison of the calculated diffraction intensities with observed intensities, two different (4×1) structural models for the thin and thick Yb-layer samples are found. Different Schottky-barrier-height values are also found for these samples. © 1991 The American Physical Society.
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APPLIED PHYSICS LETTERS, 56(22) 2204-2206, May, 1990
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PHYSICAL REVIEW B, 41(9) 6076-6078, Mar, 1990
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Ordering at Surfaces and Interfaces, 329-335, 1990
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Ordering at Surfaces and Interfaces, 337-342, 1990
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GALLIUM ARSENIDE AND RELATED COMPOUNDS 1990, 112 117-122, 1990
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Ordering at Surfaces and Interfaces, 329-335, 1990
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Ordering at Surfaces and Interfaces, 337-342, 1990
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GALLIUM ARSENIDE AND RELATED COMPOUNDS 1990, 112(112) 117-122, 1990
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Applied Physics Letters, 56(22) 2204-2206, 1990Epitaxial (111)A1/(111)GaAs Schottky contacts are formed using molecular beam epitaxy. The epitaxial relationship is determined by transmission electron microscopy. The interface is found to be abrupt and of an atomic order. Schottky barrier heights are measured by current-voltage and capacitance-voltage methods. The Schottky barrier height for a (111) surface is found to be stable under 450 °C annealing in a N2 atmosphere.
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Physical Review B, 41(9) 6076-6078, 1990The ionization energies for GaAs(001) are determined by photoemission-yield spectroscopy as a function of surface superstructure. The ionization energy changes by as much as 0.5 eV in accordance with the surface superstructure. © 1990 The American Physical Society.
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APPLIED SURFACE SCIENCE, 41-2 174-178, Nov, 1989
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APPLIED PHYSICS LETTERS, 54(23) 2347-2348, Jun, 1989
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PHYSICAL REVIEW B, 39(11) 8037-8039, Apr, 1989
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JOURNAL OF APPLIED PHYSICS, 64(11) 6575-6577, Dec, 1988
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PHYSICAL REVIEW B, 37(12) 6929-6932, Apr, 1988
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 6(1) 31-33, Jan, 1988
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JOURNAL OF CRYSTAL GROWTH, 81(1-4) 130-135, Feb, 1987
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JOURNAL OF ELECTRONIC MATERIALS, 15(5) 307-308, Sep, 1986
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APPLIED PHYSICS LETTERS, 49(13) 794-796, Sep, 1986
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Institute of Physics Conference Series, (79) 529-534, 1985
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Institute of Physics Conference Series, (79) 529-534, 1985
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 24(2) L119-L121, 1985
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IEIC Technical Report of IEICE, 2006
Books and Other Publications
8Presentations
34-
33rd International Symposium on Space Technology and Science, 2022
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33rd International Symposium on Space Technology and Science, 2022
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International Symposium on Solar Energy and Efficient Energy Usage (11th SOLARIS 2021), Sep 29, 2021
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The 30th International Photovoltaic Science and Engineering Conference (PVCEC-30), Nov 11, 2020
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2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY- (IWDTF 2019), Nov 18, 2019
Professional Memberships
1Research Projects
16-
Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2017 - Mar, 2020
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2014 - Mar, 2017
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「未来社会実現のための ICT 基盤技術の研究開発」 「イノベーション 創出を支える情報基盤強化のための新技術開発」委託研究, 文部科学省, 2012 - 2016
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Grants-in-Aid for Scientific Research, Japan Society for the Promotion of Science, Apr, 2012 - Mar, 2015
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, 2009 - 2011
● 指導学生等の数
1-
Fiscal Year2018年度(FY2018)Doctoral program東大生 1名Master’s program東大生 2名Students under Commissioned Guidance Student System2名Students under Skills Acquisition System3名
● 指導学生の表彰・受賞
1-
Student NameShintaro ToguchiStudent affiliation東京大学Awardthe 2017 RADECS sponsorshipDate2017.10
● 指導学生の顕著な論文
12-
Student nameHagimoto YsuyukiStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)Y. Hagimoto, H. Fujioka, M. Oshima , and K. Hirose, Applied Physics Letters, 77(25), pp. 4175-4177 (2000)TitleCharacterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurementsDOIhttp://doi.org/10.1063/1.1334657
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Student nameEmoto TakashiStudent affiliation名古屋大学Author(s), journal, volume number, pagination (year of publication)T. Emoto,, K. Akimoto, A. Ichimiya, K. Hirose, Applied Surface Science, 190(1-4), pp. 113-120 (2002)TitleStrain due to nickel diffusion into hydrogen-terminated Si(1 1 1) surfaceDOIhttps://doi.org/10.1016/S0169-4332(01)00852-2
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Student nameTalahashi KensukeStudent affiliation武蔵工業大学Author(s), journal, volume number, pagination (year of publication)K. Takahashi, H. Nohira, K. Hirose, and T. Hattori, Applied Physics Letters 83(16), pp. 3422-3424 (2003)TitleAccurate determination of SiO2 film thickness by x-ray photoelectron spectroscopyDOIhttps://doi.org/10.1063/1.1616204
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Student nameYanagawa YoshimitsuStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)Y. Yanagawa, K. Hirose, H. Saito, D. Kobayashi, S. Fukuda, S. Ishii, D. Takahashi, K. Yamamoto, and Y. Kuroda, IEEE Transactions on Nuclear Science, 53 (6) pp. 3575-3578 (2006)TitleDirect measurement of SET pulse widths in 0.2-μm SOI logic cells irradiated by heavy ions
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Student nameMakino TakahiroStudent affiliation総合研究大学院大学Author(s), journal, volume number, pagination (year of publication)T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, and T. Ohshima, IEEE Transactions on Nuclear Science, 56 (1) pp. 202-207 (2009)TitleLET dependence of single event transient pulse-widths in SOI logic cellDOIhttps://doi.org/10.1109/TNS.2008.2009054
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Student nameTsugawa KazuoStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)K. Tsugawa, H. Noda, K. Hirose, and H. Kawarada, Physical Review B, 81 pp. 045303-1-0045303-11 (2010)TitleSchottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamondDOIhttps://doi.org/10.1103/PhysRevB.81.045303
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Student nameChikada ShunsukeStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)S. Chikada, K. Hirose, and T. Yamamoto, Japanese Journal of Applied Physics, 49 pp. 091502-1-091502-3 (2010)TitleAnalysis of local environment of Fe ions in hexagonal BaTiO3DOIhttps://doi.org/133.74.120.63 on 04/02/2021
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Student nameKanamori HarutoStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)H. Kanamori, T. Yoshioka, K. Hirose, and T. Yamamoto, Journal of Electron Spectroscopy and Related Phenomena, 185 pp. 129-132 (2012)TitleDetermination of valence state of Mn ions in Pr1-xAxMnO3-δ (A = Ca, Sr) by Mn-L3 X-ray absorption near-edge structure analysisDOIhttps://doi.org/10.1016/j.elspec.2012.03.003
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Student nameMotoki KeisukeStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)K. Motoki, Y. Miyazawa, D. Kobayashi, M. Ikegami, T. Miyasaka, T. Yamamoto, and K. Hirose, Journal of Applied Physics, 121 (8) pp. 085501-1-085501-4 (2017)TitleDegradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement methodDOIhttps://doi.org/10.1063/1.4977238
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Student nameItsuji HiroakiStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)H. Itsuji, D. Kobayashi, O. Kawasaki, D. Matsuura, T. Narita, M. Kato, S. Ishii, K. Masukawa, and K. Hirose, IEEE Transactions on Nuclear Science, 65 (1) pp. 346-353 (2018)TitleLaser visualization of the development of long line-type multi-cell upsets in back-biased SOI SRAMsDOIhttps://doi.org/10.1109/TNS.2017.2776169
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Student nameYamaguchi KikouStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)K. Yamaguchi, D. Kobayashi, T. Yamamoto, and K. Hirose, Physica B, 532 pp. 99-102 (2018)TitleTheoretical investigation of the breakdown electric field of SiC polymorphsDOIhttps://doi.org/10.1016/j.physb.2017.03.042
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Student nameChung Chin-HanStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)C-H. Chung, D. Kobayashi, and K. Hirose, IEEE Transactions on Device and Materials Reliability, 18 (4) pp. 574-582 (2018)TitleResistance-based modeling for soft errors in SOI SRAMs caused by radiation-induced potential perturbation under the BOXDOIhttps://doi.org/10.1109/TDMR.2018.2873220
● 専任大学名
2-
Affiliation (university)総合研究大学院大学(SOKENDAI)
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Affiliation (university)東京大学(University of Tokyo)
● 所属する所内委員会
8-
ISAS Committee電子部品デバイス・電源グループ
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ISAS Committee宇宙科学技術・専門統括
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ISAS Committee宇宙科学基盤技術統括
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ISAS Committee宇宙機応用工学研究系
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ISAS Committee運営協議会委員
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ISAS Committee知財委員
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ISAS Committee研究所会議構成員
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ISAS Committee宇宙工学委員会委員