OMPRAKASH Muthusamy, ARIVANANDHAN Mukannan, ARUNKUMAR Raman, MORII Hisashi, AOKI Toru, KOYAMA Tadanobu, MOMOSE Yoshimi, IKEDA Hiroya, Tatsuoka Hirokazu, OKANO Yasunori, OZAWA Tetsuo, INATOMI Yuko, MOORTHYBABU Sridharan, HAYAKAWA Yasuhiro
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113(39) 27-31 2013年5月16日
Si dissolution into Ge melt and crystal growth of SiGe was in-situ observed by X-ray penetration method. The rectangular shaped sandwich sample of Si (seed)/Ge/Si(feed) was used for the experiment. The penetrated X-ray intensities through the sample were recorded by rectangular shaped CdTe detector as a function of time and temperature. The experimental results demonstrate that the dissolution of Si seed was larger compared to Si feed crystal. Dissolution lengths result agreed well with numerical results. From the experimental and numerical dissolution length results. The dissolution process of Si into Ge melt was strongly influenced by gravity induced solutal convection. Moreover, the crystal growth of SiGe was clearly observed from the drastic variation of penetrated X-ray intensity near the growth interface. The growth mechanism for the observed SiGe growth process was discussed based on the penetrated X-ray intensity profile and composition profile measured by EPMA.