Faculty of Science and Technology

Shoichi Sakamoto

  (坂本 昇一)

Profile Information

Affiliation
Assistant Professor, Faculty of Science and Technology Department of Science and Technology , Seikei University
Degree
理学博士(慶應義塾大学大学院)

Researcher number
80235176
J-GLOBAL ID
201501032797748450
researchmap Member ID
B000244181

External link

Papers

 74
  • Mitsuyoshi Tomiya, Shoichi Sakamoto, Eric J. Heller
    INTERNATIONAL JOURNAL OF MODERN PHYSICS C, 30(4), Apr, 2019  Peer-reviewed
    This study analyzed the scar-like localization in the time-average of a time-evolving wavepacket on a desymmetrized stadium billiard. When a wavepacket is launched along the orbits, it emerges on classical unstable periodic orbits as a scar in stationary states. This localization along the periodic orbit is clarified through the semiclassical approximation. It essentially originates from the same mechanism of a scar in stationary states: piling up of the contribution from the classical actions of multiply repeated passes on a primitive periodic orbit. To achieve this, several states are required in the energy range determined by the initial wavepacket.
  • Taiga Wakai, Shoichi Sakamoto, Mitsuyoshi Tomiya
    JOURNAL OF PHYSICS-CONDENSED MATTER, 30(26), Jul, 2018  Peer-reviewed
    We present the first principle calculations of the electrical properties of graphene sheet/h-BN heterojunction (GS/h-BN) and 11 -armchair graphene nanoribbon/h-BN heterojunction (11 -AGNR/h-BN), which are carried out using the density functional theory (DFT) method and the non-equilibrium Green's function (NFGF) technique. Since 11 -AGNR belongs to the conductive (3n-l )-family of AGNR, both are metallic nanomaterials with two transverse arrays of li-BN, which is a wide-gap semi-conductor. The two h-BN arrays act as double barriers. The transmission functions (TF) and I-V characteristics of GS/h-BN and 11 -AGNR/h-BN are calculated by DFT and NFGF, and they show that quantum double barrier tunneling occurs. The TF becomes very spiky in both materials, and it leads to step-wise I-V characteristics rather than negative resistance, which is the typical behavior of double barriers in semiconductors. The results of our first principle calculations are also compared with ID Dirac equation model for the double barrier system. The model explains most of the peaks of the transmission functions nearby the Fermi energy quite well. They are due to quantum tunneling.
  • Wakai T., S. Shoichi, Tomiya M.
    Meeting Abstracts of the Physical Society of Japan, 71 2536-2536, 2016  
  • Wakai Taiga, Sakamoto Shoichi, Tomiya Mitsuyoshi
    Meeting Abstracts of the Physical Society of Japan, 71 2344-2344, 2016  
  • Wakai T., Sakamoto S., Tomiya M.
    Meeting Abstracts of the Physical Society of Japan, 70 2342-2342, 2015  

Misc.

 81

Teaching Experience

 7

Research Projects

 3