新船 幸二

第29回宇宙環境利用シンポジウム (2015年1月24日-25日. 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS)), 相模原市, 神奈川県著者人数: 11名資料番号: SA6000035022レポート番号: ISAS-SUR29-S17

We studied the structure of ozone-based atomic layer deposited aluminium oxide (AlO<inf>x</inf>) films as a passivation layer for p-type crystalline silicon (c-Si) solar cells and focused on the differences in the structure by the production conditions of AlO<inf>x</inf>films. Carbon (C)-related groups such as methyl, hydroxyl, and carboxyl groups which originate from the aluminium source, trimethylaluminium, were only found in the AlO<inf>x</inf>film deposited at room temperature (RT-sample). By post-deposition thermal annealing (PDA), the C-related groups were desorbed from the film and a part of their space remained as voids. The C-related groups were not found in the films deposited at 200 or 300 °C (heated-samples) since they were desorbed during the deposition. Even though C-related groups did not exist in the both RT- and heated-samples after PDA, the structure of the AlO<inf>x</inf>film of the RT-sample was different from that of the heated-sample.