研究者業績

豊田 紀章

トヨダ ノリアキ  (Noriaki Toyoda)

基本情報

所属
兵庫県立大学 大学院工学研究科電子情報工学専攻 教授
学位
博士(工学)(1999年3月 京都大学)

J-GLOBAL ID
201801017197581245
researchmap会員ID
B000300347

論文

 187
  • Masaya Takeuchi, Satoru Suzuki, Masaki Nakamura, Takashi Hata, Yusuke Nishiuchi, Kaori Tada, Noriaki Toyoda
    Japanese Journal of Applied Physics 2024年6月7日  
    Abstract We would like to improve detection sensitivity by making photoelectron transmission window (SiNx membrane) of liquid cell ultra-thin for liquid measurement using XPS or X-ray PEEM at UHV. In this study, thinning of the membrane using gas cluster ion beams (GCIB) was demonstrated and the burst pressure was compared with those thinned with atomic 400 eV Ar+ ions. It was shown that SiNx membranes thinned by GCIB was 2.5 times higher burst pressure than the Ar+ ions. In addition, improvement of sensitivity of characteristic X-ray from liquid-water induced by low-energy electrons was investigated. By using 4.5 nm thick SiNx membrane etched by GCIB, the X-ray intensity became 1.6 times higher than those from 11 nm thick pristine membrane at electron beam energy of 1.5 keV. This result showed good agreement with Monte Carlo simulation results of the electron-beam-induced X-ray emission from liquid-water beneath SiNx membrane.
  • Masaya Takeuchi, Noriaki Toyoda
    Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 550 165317-165317 2024年5月  
  • Masaya Takeuchi, Reki Fujiwara, Noriaki Toyoda
    Japanese Journal of Applied Physics 2023年4月26日  査読有り
    Abstract Atomic layer etching (ALE) of silicon nitride film (SiNx) was demonstrated using oxygen gas cluster ion beam (O2-GCIB) with acetylacetone (Hacac) as adsorption gas. GCIB is a beam of aggregates of several thousand atoms, enabling low damage and high energy density irradiation. In this study, we performed the characterization of the ALE, and revealed the etching mechanism. XPS results indicated the following etching process. (i) O2-GCIB irradiation oxidizes the surface of SiNx film, (ii) the oxide layer reacts with Hacac vapor, and (iii) the reaction layer is removed by the GCIB. The ALE can be executed by sequential repetition of the processes (i)~(iii). This technique enables highly accurate control of SiNx film thickness with low irradiation damage.
  • S. Hanahara, M. Takeuchi, N. Toyoda
    Japanese Journal of Applied Physics 61(SF) SF1004-SF1004 2022年3月24日  査読有り
    Abstract Surface-activated bonding (SAB) of Cu by gas cluster ion beam (GCIB) irradiation with acetic acid vapor was studied. GCIB irradiation realizes surface smoothing and surface reaction enhancement without severe damage. Therefore, it is promising for SAB. In this study, acetic acid vapor was introduced during Ar-GCIB irradiation to assist the removal of surface oxides on the Cu surface. XPS results showed that Cu(OH)2 was effectively removed by reaction with adsorbed acetic acid, and there was no residue by acetic acid adsorption. In addition, surface roughness decreased by Ar-GCIB irradiation with acetic acid because of the preferential removal of protrusion. Preliminary bonding experiments showed an increase of Cu–Cu bond strength by Ar-GCIB irradiation with acetic acid vapor.
  • 豊田 紀章
    応用物理 90(4) 239-243 2021年4月  査読有り招待有り筆頭著者

MISC

 44

書籍等出版物

 2

講演・口頭発表等

 23

共同研究・競争的資金等の研究課題

 4

社会貢献活動

 2