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Hiroshi Nishioka

  (西岡 洋)

Profile Information

Affiliation
Associate Professor, Graduate School, of Engineering, University of Hyogo
Degree
工学修士(Mar, 1983, 徳島大学)
工学博士(Mar, 1986, 姫路工業大学)

J-GLOBAL ID
200901031621256000
researchmap Member ID
1000057736

環境浄化や資源回収に資する無機吸着材の開発に関わっている。
セシウムイオンやストロンチウムイオン、ランタノイドイオンや亜ヒ酸イオンの吸着除去に取り組んでいる。


Papers

 54

Misc.

 39
  • 風呂谷亮佑, 小舟正文, 釘宮拓也, 上島慧史, 栗山知侑, 西岡洋, 菊池丈幸, 藤澤浩訓, 中嶋誠二, 清水勝, 福室直樹
    日本セラミックス協会年会講演予稿集(CD-ROM), 2015, 2015  
  • Seiji Nakashima, Yosuke Tsujita, Syota Seto, Hironori Fujisawa, Hiroshi Nishioka, Masafumi Kobune, Masaru Shimizu, JungMin Park, Takeshi Kanashima, Masanori Okuyama
    2011 International Symposium on Applications of Ferroelectrics and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/PFM 2011, Oct 5, 2011  
    350-nm-thick BiFeO3(BFO) thin films have been deposited by dual ion beam sputtering on SrRuO3-buffered SrTiO3(001) substrates of 0° and 0.5° off-cut along [100] at various Bi2O3-side/Fe2O3-side beam current ratio. The BFO thin film on 0.5° off-cut STO substrate deposited at beam current ratio of 20 mA/30 mA show fully saturated D-E hysteresis loops at room temperature. The remanent polarization (2Pr) was 132 μC/cm2. Stripe domain structure was also observed in IP piezoelectric response image. It is considered that the improvement of leakage of BFO on 0.5° off-cut STO substrate is due to reduction of 109° domain walls. © 2011 IEEE.
  • Masafumi Kobune, Akihiro Tamura, Kazuki Imagawa, Ryo Kishimoto, Hiroshi Nishioka, Seiji Nakashima, Hironori Fujisawa, Masaru Shimizu, Hideshi Yamaguchi, Koichiro Honda
    2011 International Symposium on Applications of Ferroelectrics and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, ISAF/PFM 2011, Oct 5, 2011  
    Epitaxially a- and b-axis-oriented (Bi 3.25Nd 0.75) Ti 3O 12 (BNT-0.75) films and nanoplates have been fabricated on four Nb:TiO 2(101) substrates with 0-0.79 mass% Nb by high-temperature sputtering. It is shown from piezoresponse scanning force microscopy (PFM) measurements that the effective piezoelectric coefficients (d 33) at room temperature derived from the two linear gradients for the asymmetric displacement-voltage hysteresis loop are 11-13 pm/V. © 2011 IEEE.
  • 小舟正文, 岸本亮, 西岡洋, 中嶋誠二, 藤澤浩訓, 清水勝, 山口秀史, 本田耕一郎
    日本セラミックス協会秋季シンポジウム講演予稿集, 24th, 2011  

Presentations

 74

Teaching Experience

 4

Research Projects

 11

Industrial Property Rights

 3