山川 進二

Abstract Line width roughness (LWR) in EUV lithography is known to be caused by “Stochastic effects,” such as the chemical composition distribution within the resist thin film and the non-uniformity of chemical reactions. The compositions of chemically amplified resists before coating film on a silicon wafer typically include a base polymer, a photoacid generator, a quencher, and a solvent. In this paper, we investigated about solvent effect, which is the main volume of the resist solution. We investigated the solvent effect of the resist solution by dynamic light scattering (DLS) measurement. The particle size of the polymer in several solvents revealed diameters from 4 to 6 nm. The solvent effect in thin film was measured by the resonant soft X-ray scattering (RSoXS) method. It was found that the distribution of resist compositions differs depending on the type of solvents and the pre-bake temperatures. These results suggested that the selection of the resist solvent may also contribute to reducing LWR.