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廣瀬 和之

ヒロセ カズユキ  (Kazuyuki Hirose)

基本情報

所属
国立研究開発法人宇宙航空研究開発機構 宇宙科学研究所 特任教授
学位
工学博士(早稲田大学)
工学修士
J-GLOBAL ID
200901096979972445
researchmap会員ID
1000192906

研究キーワード

 4

研究分野

 2

学歴

 2

委員歴

 14
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受賞

 6
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論文

 57
  • K Hirose, H Nohira, T Koike, K Sakano, T Hattori
    PHYSICAL REVIEW B 59(8) 5617-5621 1999年2月  査読有り
    The valence-band and the O 2s core-level spectra of ultrathin (about 1 nm) SiO2 layers [which are formed at the initial stages of oxidation of hydrogen-terminated Si(100) substrates] were measured by high-resolution x-ray photoelectron spectroscopy. The energy difference between the valence band and the core level was found to be greater than that for the bulk SiO2. A first-principle molecular-orbital calculation was performed on Si2O7H6 clusters in order to obtain the energy difference (which depends on the structure of SiO2 layers). A comparison of the experimental data and the molecular-orbital calculations indicates chat the intertetrahedral bond angle, theta(Si-O-Si), is 135 degrees to 140 degrees in the SiO2 structural transition layers at the SiO2/Si interfaces. [S0163-1829(99)03708-X].
  • H. Yoshida, K. Hirose, Y. Sakagami
    Fusion Engineering and Design 44(1-4) 467-470 1999年  査読有り
    In laser fusion experiments, the presence of a supporting stalk affects irradiation uniformity. The magnetic suspension system (MSS) realizes a non-contact technique of stably supporting pellets by the magnetic force. The small mechanical vibration of the system, when it exists, swings the magnetically suspended pellet (MSP). In order to damp the swing motion, we introduce the active damper. © 1999 Elsevier Science S.A. All rights reserved.
  • K. Hirose, H. Nohira, T. Koike, K. Sakano, T. Hattori
    Physical Review B - Condensed Matter and Materials Physics 59(8) 5617-5621 1999年  査読有り
    The valence-band and the O (Formula presented) core-level spectra of ultrathin (about 1 nm) (Formula presented) layers [which are formed at the initial stages of oxidation of hydrogen-terminated Si(100) substrates] were measured by high-resolution x-ray photoelectron spectroscopy. The energy difference between the valence band and the core level was found to be greater than that for the bulk (Formula presented) A first-principle molecular-orbital calculation was performed on (Formula presented) clusters in order to obtain the energy difference (which depends on the structure of (Formula presented) layers). A comparison of the experimental data and the molecular-orbital calculations indicates that the intertetrahedral bond angle, (Formula presented) is 135° to 140° in the (Formula presented) structural transition layers at the (Formula presented) interfaces. © 1999 The American Physical Society.
  • Y Yoshimura, K Ono, H Fujioka, S Hayakawa, Y Sato, M Uematsu, Y Baba, K Hirose, M Oshima
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 38 552-555 1999年  査読有り
    We have investigated the positions of the piled-up phosphorus atoms at the SiO2/Si interface using the extended X-ray absorption fine structure (EXAFS) and S-ray photoelectron spectroscopy (XPS). The EXAFS and XPS data can be well explained on the assumption that the piled-up arsenic atoms exist at the tetrahedral sites. On the contrary, phosphorus atoms exist not at the tetrahedral sites but at the denser sites. The depth profile measurements of XPS have revealed that the piled-up arsenic and phosphorus atoms exist within 20 Angstrom from the interface.
  • Y Hagimoto, T Fujita, K Ono, H Fujioka, M Oshima, K Hirose, M Tajima
    SILICON NITRIDE AND SILICON DIOXIDE THIN INSULATING FILMS 99(6) 134-142 1999年  査読有り
    We have characterized carrier-trapping phenomena in ultra-thin chemical oxides by measuring the Si 2p core-level energies of silicon substrates covered with thin oxides layers as a function of x-ray irradiation time. It is found that the Si 2p peak energy, which corresponds to the band bending at the SiO2/Si interface, changes as the x-ray irradiation time increases. We attribute this to carrier-trapping phenomena in the oxides. Using this technique, we found that the carrier-trapping phenomena differ remarkably among several chemical oxides. We also discuss the atomic structure of traps that cause the trapping phenomena.
  • K AKIMOTO, K HIROSE, J MIZUKI
    PHYSICAL REVIEW B 44(4) 1622-1627 1991年7月  査読有り
    Different 4 X 1 superstructures are found for Yb/GaAs(001) contacts with different Yb thicknesses. To clarify the role of Yb atoms in the 4 X 1 structure, an x-ray anomalous-dispersion effect has been used in the grazing-incidence x-ray-diffraction geometry. Diffraction intensities measured in the x-ray energy range near the Yb L(III) absorption edge show a characteristic variation, which reflects the energy dependence of the real part of the anomalous scattering factor (f') for Yb atoms. As a result, for all the samples, Yb atoms are found to order in 4 X 1 structures. The arrangements of the Yb atoms in the 4 X 1 unit cell are derived from Buerger's decomposition method of the Patterson function. By comparison of the calculated diffraction intensities with observed intensities, two different (4 X 1) structural models for the thin and thick Yb-layer samples are found. Different Schottky-barrier-height values are also found for these samples.
  • K UENO, K HIROSE, T YOSHIDA
    INSTITUTE OF PHYSICS CONFERENCE SERIES (112) 117-122 1990年  査読有り
    Single crystal Al Schottky contacts are formed using molecular beam epitaxy (MBE) on heat-cleaned (111)A and (111)B GaAs surfaces. The interfaces are found to be abrupt and of an atomic order by high-resolution transmission electron microscopy (TEM). The Schottky barrier heights (SBHs) for the epitaxial contacts on the two polar surfaces are found to have the same value by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The value of the Fermi energy (E(F)) for the two GaAs surfaces are also determined to agree with each other by x-ray photoelectron spectroscopy (XPS). The SBHs are also found to be stable under 500-degrees-C-annealing in a N2 atmosphere. The agreement of Schottky barrier heights between (111)A and (111)B and the improved thermal stability are considered to be the result of the elimination of oxide layers and grain- boundary diffusions of Ga and As atoms.

MISC

 351
  • 小林大輔, 廣瀬和之
    応用物理 92(2) 89-93 2023年2月  
  • Kazuyuki Hirose, Daisuke Kobayashi, Taichi Ito, Tetsuo Endoh
    JAPANESE JOURNAL OF APPLIED PHYSICS 56(8) 2017年8月  
    The memory reliability of magnetic tunnel junctions has been examined from the aspect of their potential use in disaster-resilient computing. This computing technology requires memories that can keep stored information intact even in power-cut emergency situations. Such a requirement has been quantified as a score of acceptable flip probability, which is the failure in time (FIT) rate of 1 for a single-interface perpendicular magnetic tunnel junction (p-MTJ) with a disk diameter of 20 nm. For comparison with this acceptable probability, p-MTJ memory reliability has been evaluated. The risk of particle radiation bombardments, i.e., alpha particles and neutrons-the well-known soft error sources on the ground-has been evaluated from the aspects of both frequency of bombardments and the hazardous effects of bombardments. This study highlights that high-energy terrestrial neutrons may lead to soft errors in p-MTJs, but the flip probability, or the risk, is expected to be lower than 1 x 10(-6) FIT/p-MTJ, which is much smaller than the target probability. It has also been found that the use of p-MTJs can reduce the risk by three orders of magnitude compared with that of the conventional SRAMs. Few risks have been suggested for other radiation particles, such as alpha particles and thermal neutrons. (C) 2017 The Japan Society of Applied Physics
  • 天野裕士, 天野裕士, 小林大輔, 野平博司, 廣瀬和之
    応用物理学会春季学術講演会講演予稿集(CD-ROM) 62nd 2015年  
  • 廣瀬 和之, 小林 大輔
    応用物理 83(8) 655-659 2014年8月  
  • Takanobu Shimada, Hiroyuki Toyota, Kazuyuki Hirose, Yoshitomo Maeda, Kazuhisa Mitsuda
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) 2161-2165 2014年  
    This paper presents analysis results for the onorbit performance of a solar array paddle of the X-ray astronomy satellite Suzaku. The current generated by the solar array was decreasing significantly for approximate one year after mid-2011. We estimated the degradation of the output by simulating the on-orbit environment according to the JPL prediction method. The analysis results indicate that the on-orbit degradation of the solar array paddle is greater than the predicted performance degradation in a space environment. We determined that the difference between the on-orbit data and the analysis results could be attributed to either an increase in cell temperature or radiation degradation due to solar flares.
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書籍等出版物

 8
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講演・口頭発表等

 34
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所属学協会

 1

共同研究・競争的資金等の研究課題

 16
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● 指導学生等の数

 1
  • 年度
    2018年度(FY2018)
    博士課程学生数
    東大生　1名
    修士課程学生数
    東大生　2名
    受託指導学生数
    2名
    技術習得生の数
    3名

● 指導学生の表彰・受賞

 1
  • 指導学生名
    東口　紳太郎
    所属大学
    東京大学
    受賞内容（タイトル、団体名等）
    the 2017 RADECS sponsorship
    受賞年月日
    2017.10

● 指導学生の顕著な論文

 12
  • 指導学生名
    萩本賢哉
    所属大学
    東京大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    Y. Hagimoto, H. Fujioka, M. Oshima , and K. Hirose, Applied Physics Letters, 77(25), pp. 4175-4177 (2000)
    論文タイトル
    Characterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurements
    DOI
    http://doi.org/10.1063/1.1334657
  • 指導学生名
    榎本貴志
    所属大学
    名古屋大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    T. Emoto,, K. Akimoto, A. Ichimiya, K. Hirose, Applied Surface Science, 190(1-4), pp. 113-120 (2002)
    論文タイトル
    Strain due to nickel diffusion into hydrogen-terminated Si(1 1 1) surface
    DOI
    https://doi.org/10.1016/S0169-4332(01)00852-2
  • 指導学生名
    高橋健介
    所属大学
    武蔵工業大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    K. Takahashi, H. Nohira, K. Hirose, and T. Hattori, Applied Physics Letters 83(16), pp. 3422-3424 (2003)
    論文タイトル
    Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy
    DOI
    https://doi.org/10.1063/1.1616204
  • 指導学生名
    柳川善光
    所属大学
    東京大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    Y. Yanagawa, K. Hirose, H. Saito, D. Kobayashi, S. Fukuda, S. Ishii, D. Takahashi, K. Yamamoto, and Y. Kuroda, IEEE Transactions on Nuclear Science, 53 (6) pp. 3575-3578 (2006)
    論文タイトル
    Direct measurement of SET pulse widths in 0.2-μm SOI logic cells irradiated by heavy ions
  • 指導学生名
    牧野高紘
    所属大学
    総合研究大学院大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, and T. Ohshima, IEEE Transactions on Nuclear Science, 56 (1) pp. 202-207 (2009)
    論文タイトル
    LET dependence of single event transient pulse-widths in SOI logic cell
    DOI
    https://doi.org/10.1109/TNS.2008.2009054
  • 指導学生名
    津川和夫
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    K. Tsugawa, H. Noda, K. Hirose, and H. Kawarada, Physical Review B, 81 pp. 045303-1-0045303-11 (2010)
    論文タイトル
    Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond
    DOI
    https://doi.org/10.1103/PhysRevB.81.045303
  • 指導学生名
    近田旬佑
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    S. Chikada, K. Hirose, and T. Yamamoto, Japanese Journal of Applied Physics, 49 pp. 091502-1-091502-3 (2010)
    論文タイトル
    Analysis of local environment of Fe ions in hexagonal BaTiO3
    DOI
    https://doi.org/133.74.120.63 on 04/02/2021
  • 指導学生名
    金盛治人
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    H. Kanamori, T. Yoshioka, K. Hirose, and T. Yamamoto, Journal of Electron Spectroscopy and Related Phenomena, 185 pp. 129-132 (2012)
    論文タイトル
    Determination of valence state of Mn ions in Pr1-xAxMnO3-δ (A = Ca, Sr) by Mn-L3 X-ray absorption near-edge structure analysis
    DOI
    https://doi.org/10.1016/j.elspec.2012.03.003
  • 指導学生名
    元木啓介
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    K. Motoki, Y. Miyazawa, D. Kobayashi, M. Ikegami, T. Miyasaka, T. Yamamoto, and K. Hirose, Journal of Applied Physics, 121 (8) pp. 085501-1-085501-4 (2017)
    論文タイトル
    Degradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement method
    DOI
    https://doi.org/10.1063/1.4977238
  • 指導学生名
    井辻宏章
    所属大学
    東京大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    H. Itsuji, D. Kobayashi, O. Kawasaki, D. Matsuura, T. Narita, M. Kato, S. Ishii, K. Masukawa, and K. Hirose, IEEE Transactions on Nuclear Science, 65 (1) pp. 346-353 (2018)
    論文タイトル
    Laser visualization of the development of long line-type multi-cell upsets in back-biased SOI SRAMs
    DOI
    https://doi.org/10.1109/TNS.2017.2776169
  • 指導学生名
    山口記功
    所属大学
    早稲田大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    K. Yamaguchi, D. Kobayashi, T. Yamamoto, and K. Hirose, Physica B, 532 pp. 99-102 (2018)
    論文タイトル
    Theoretical investigation of the breakdown electric field of SiC polymorphs
    DOI
    https://doi.org/10.1016/j.physb.2017.03.042
  • 指導学生名
    チョン　チンハン
    所属大学
    東京大学
    著者名, ジャーナル名, 巻号ページ（出版年）
    C-H. Chung, D. Kobayashi, and K. Hirose, IEEE Transactions on Device and Materials Reliability, 18 (4) pp. 574-582 (2018)
    論文タイトル
    Resistance-based modeling for soft errors in SOI SRAMs caused by radiation-induced potential perturbation under the BOX
    DOI
    https://doi.org/10.1109/TDMR.2018.2873220

● 専任大学名

 2
  • 専任大学名
    総合研究大学院大学（SOKENDAI)
  • 専任大学名
    東京大学（University of Tokyo)

● 所属する所内委員会

 8
  • 所内委員会名
    電子部品デバイス・電源グループ
  • 所内委員会名
    宇宙科学技術・専門統括
  • 所内委員会名
    宇宙科学基盤技術統括
  • 所内委員会名
    宇宙機応用工学研究系
  • 所内委員会名
    運営協議会委員
  • 所内委員会名
    知財委員
  • 所内委員会名
    研究所会議構成員
  • 所内委員会名
    宇宙工学委員会委員
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