Takeuchi Daisuke, Kitai Atsushi, Toyoda Noriaki, Matsuo Jiro, Takaoka Gikan, Yamada Isao
Technical report of IEICE. SDM, 94(366) 97-104, Nov 24, 1994
We have developed 200keV gas cluster implantafion system and studied effects of Ar cluster irradiation on Si(100)surfaces by RBS.Clusters are aggregates of tens,hundreds,or even many thousands of atoms or molecules which can be easily ionized, accelerated in an electric field.The kinetic energy of a cluster is shared by its constituent atoms so that it is possible to realizer equivalent low energy and high current ion beam.Such a low energy ions result in a very shallow implantation. Characteristics of impacts process of Ar clusters on a Si surface were also simulated by molecular dynamics simulation.