研究者業績
基本情報
研究キーワード
3経歴
6-
2007年4月 - 現在
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2004年4月 - 2007年3月
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2002年10月 - 2004年3月
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2002年4月 - 2002年9月
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2000年4月 - 2002年3月
学歴
4-
- 1994年
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- 1994年
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- 1989年
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- 1989年
論文
64-
2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 2023年11月16日 査読有り
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2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 2022年11月28日 査読有り
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Applied Physics Letters 120(23) 232106-232106 2022年6月6日 査読有りThe interface properties of strongly correlated electron system/band semiconductor junctions were investigated in the La1−xSrxVO3/p-Si(100) structure. Spectroscopic observations show that the electronic structure of the interface is typical of insulator/semiconductor junctions for x ≤ 0.2 and Schottky junctions for x ≥ 0.25. For the forward current density–bias voltage (J–V) characteristics, energy barriers that were otherwise unexplainable by spectroscopy were estimated from the thermionic emission model fitting of the J–V characteristics, indicating that the injected carriers from Si to La1−xSrxVO3 can also feel the correlation force of Coulomb repulsion at the interface.
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Japanese Journal of Applied Physics 58(12) 2019年 査読有り
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2018 IEEE International Meeting for Future of Electron Devices, Kansai 2018年12月19日 査読有り責任著者Microscopic characterization of generation lifetimes in a SiO 2 /Si structure has been carried out using scanning capacitance microscopy (SCM). Generation lifetimes could be investigated by monitoring the capacitance transient due to inversion layer formation. The validity of local capacitance transient measurements by SCM was verified by comparing with the results of conventional capacitance transient measurements using a MOS capacitor. Furthermore, it was demonstrated that SCM can be used for imaging of the formation process of the inversion layer on a nanometer scale.
MISC
83-
Proc. of the 2019 International Meeting for Future of Electron Devices, Kansai, Kyoto PP11 2019年11月
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応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th ROMBUNNO.17P-A11-11 2014年9月1日
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応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th ROMBUNNO.19P-A25-16 2014年9月1日
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応用物理学会春季学術講演会講演予稿集(CD-ROM) 61st ROMBUNNO.20P-D6-8 2014年3月3日
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Jpn J Appl Phys 52(12) 122303-122303-5 2013年12月25日We studied the structure of ozone-based atomic layer deposited aluminium oxide (AlO<inf>x</inf>) films as a passivation layer for p-type crystalline silicon (c-Si) solar cells and focused on the differences in the structure by the production conditions of AlO<inf>x</inf>films. Carbon (C)-related groups such as methyl, hydroxyl, and carboxyl groups which originate from the aluminium source, trimethylaluminium, were only found in the AlO<inf>x</inf>film deposited at room temperature (RT-sample). By post-deposition thermal annealing (PDA), the C-related groups were desorbed from the film and a part of their space remained as voids. The C-related groups were not found in the films deposited at 200 or 300 °C (heated-samples) since they were desorbed during the deposition. Even though C-related groups did not exist in the both RT- and heated-samples after PDA, the structure of the AlO<inf>x</inf>film of the RT-sample was different from that of the heated-sample.
講演・口頭発表等
44共同研究・競争的資金等の研究課題
10-
日本学術振興会 科学研究費助成事業基盤研究C 2018年4月 - 2021年3月
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NEDO 2015年4月 - 2019年3月
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日本学術振興会 科学研究費助成事業 2014年4月 - 2017年3月
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科学技術振興機構 戦略的創造研究推進事業(CREST) 2009年10月 - 2015年3月
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科学技術振興機構 地域イノベーション創出総合支援事業シーズ発掘試験 2008年4月 - 2009年3月