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<jats:title>Abstract</jats:title> <jats:p>The effects of soft X-ray irradiation and atomic hydrogen annealing (AHA) on the reduction of graphene oxide (GO) to obtain graphene were investigated. To clarify the interaction between soft X-rays and GO, soft X-rays of 300 eV and 550 eV were used for C 1s and O 1s inner-shell electron excitation, respectively at the NewSUBARU synchrotron radiation facility. Low-temperature reduction of the GO film was achieved by using soft X-ray at temperatures below 150 °C at 300 eV, and 60 °C at 550 eV. O-related peaks in X-ray photoelectron spectroscopy, such as the C–O–C peak, were smaller at 550 eV than those at 300 eV. This result indicates that excitation of the core–shell electrons of O enhances the reduction of GO. Soft X-rays preferentially break C–C and C–O bonds at 300 and 550 eV, respectively.</jats:p>

<jats:title>Abstract</jats:title> <jats:p>The reduction of graphene oxide (GO) through atomic hydrogen annealing (AHA) and soft X-ray irradiation is investigated using microwell substrates with μm-sized holes with and without Ni underlayers. The GO film is reduced through AHA at 170 °C and soft X-ray irradiation at 150 °C. In contrast, some GO films are not only reduced but also amorphized through soft X-ray irradiation. The effect of the Ni underlayer on GO reduction differs between AHA and soft X-ray irradiation. In AHA, the difference in GO reduction between SiO<jats:sub>2</jats:sub> and Ni underlayer was originated from the atomic hydrogen density on sample surface. On the other hand, in soft X-ray irradiation, the difference in GO reduction between SiO<jats:sub>2</jats:sub> and the Ni underlayer originates from the excited electrons generated by soft X-ray irradiation. Reduction without damage is more likely to occur in the suspended GO than in the supported GO.</jats:p>