Curriculum Vitaes
Profile Information
- Affiliation
- Professor, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency
- Degree
- (BLANK)(Waseda University)(BLANK)
- J-GLOBAL ID
- 200901096979972445
- researchmap Member ID
- 1000192906
Research Interests
4Research Areas
2Education
2-
- 1983
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- 1981
Committee Memberships
14Awards
6-
Apr, 2012
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Oct, 2010
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Mar, 2008
Papers
61-
Journal of Evolving Space Activities, 1, Apr, 2024 Peer-reviewed
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Journal of Evolving Space Activities, 1, Dec, 2023 Peer-reviewed
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IEEE Transactions on Nuclear Science, 1-1, 2023
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2022 IEEE International Reliability Physics Symposium (IRPS), Mar 27, 2022
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The Journal of Physical Chemistry C, 125(24) 13131-13137, Jun 24, 2021
Misc.
284-
JAPANESE JOURNAL OF APPLIED PHYSICS, 56(8), Aug, 2017
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2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2161-2165, 2014
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Proceedings of the Society Conference of IEICE, 2013(2) 88-88, Sep 3, 2013
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Proceedings of the Society Conference of IEICE, 2013(2) 99-99, Sep 3, 2013
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Technical report of IEICE. SANE, 112(229) 17-22, Oct 3, 2012Japan Aerospace Exploration Agency (JAXA) has been developing an X-ray astronomy satellite named "ASTRO-H", which will be launched in 2014. This paper provides a summary of the design overview and development status of an electrical power subsystem for ASTRO-H. The subsystem consists of rigid solar array paddles that generate approximately 3500W at the end of life of the system, a power control unit that delivers an unregulated 50V bus power supply, shunt dissipators, battery charge control units, two 100-Ah Li-ion batteries, and a non-explosive actuator controller. Currently, manufacturing and verification tests for the satellite system have been implemented for the launch.
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Aeronautical and space sciences Japan, 59(689) 175-183, Jun 5, 2011
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Aeronautical and space sciences Japan, 59(688) 149-154, May 5, 2011
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THIN SOLID FILMS, 519(13) 4216-4219, Apr, 2011
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Development of LSIs for both space and commercial use: radiation hardening technique for SOI devicesAeronautical and space sciences Japan, 59(684) 8-14, 2011
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IEICE technical report, 110(308) 53-58, Nov 19, 2010We have developed dual-use LST technologies and manufacturing system both for space and high-temperature / high reliability commercial applications. Radiation-hardening is obtained by means of circuit designs for 0.2μm fully-depleted SOI process.
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電子情報通信学会ソサイエティ大会講演論文集, 2010 "SS-30"-"SS-31", Aug 31, 2010
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 57(4) 1811-1819, Aug, 2010
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Physical Review B - Condensed Matter and Materials Physics, 81(4) 045303, Jan 8, 2010
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Aeronautical and space sciences Japan, 58(683) 365-372, 2010
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J. Surf. Sci. Soc. Jpn., 31(1) 30-34, 2010This article summarizes recent progress and current scientific understanding of atomic and/or electronic structures of ultrathin SiO<Sub>2</Sub> films and/or its interface with Si substrates in addition to the review of scientific achievements done in the past 30 years.
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JAPANESE JOURNAL OF APPLIED PHYSICS, 49(9) 091502-1-091502-3, 2010
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Proceedings of SPIE - The International Society for Optical Engineering, 7732 77320Z, 2010
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JAPANESE JOURNAL OF APPLIED PHYSICS, 49(9) 091502-1-091502-3, 2010
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JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 176(1-3) 46-51, Jan, 2010
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56(6) 3180-3184, Dec, 2009
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56(6) 3043-3049, Dec, 2009
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56(4) 2014-2020, Aug, 2009
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56(4) 1958-1963, Aug, 2009
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JAPANESE JOURNAL OF APPLIED PHYSICS, 48(3) 031201-1-031201-4, Mar, 2009
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 56(1) 202-207, Feb, 2009
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Proceedings of The 3rd IAASS Conference, 4, 2009
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2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2, 165-+, 2009
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Proceedings of The 3rd International Association for the Advancement of Space Safety (IAASS) Conference, 4, 2009
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IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 55(6) 2872-2879, Dec, 2008
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APPLIED PHYSICS LETTERS, 93(19) 193503, Nov, 2008
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IEICE technical report, 108(100) 67-72, Jun 26, 2008SET pulse-widths were measured as a function of LET by using pulse capture circuits. In addition, a scan flip-flop (FF) is designed to observe both single event transient (SET) and single event upset (SEU) soft errors in logic VLSI system.
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JOURNAL OF POWER SOURCES, 181(1) 149-154, Jun, 2008
Books and Other Publications
8Presentations
34-
33rd International Symposium on Space Technology and Science, 2022
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33rd International Symposium on Space Technology and Science, 2022
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International Symposium on Solar Energy and Efficient Energy Usage (11th SOLARIS 2021), Sep 29, 2021
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The 30th International Photovoltaic Science and Engineering Conference (PVCEC-30), Nov 11, 2020
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2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY- (IWDTF 2019), Nov 18, 2019
Professional Memberships
1Research Projects
16-
Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2017 - Mar, 2020
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2014 - Mar, 2017
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「未来社会実現のための ICT 基盤技術の研究開発」 「イノベーション 創出を支える情報基盤強化のための新技術開発」委託研究, 文部科学省, 2012 - 2016
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Grants-in-Aid for Scientific Research, Japan Society for the Promotion of Science, Apr, 2012 - Mar, 2015
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Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B), Japan Society for the Promotion of Science, 2009 - 2011
● 指導学生等の数
1-
Fiscal Year2018年度(FY2018)Doctoral program東大生 1名Master’s program東大生 2名Students under Commissioned Guidance Student System2名Students under Skills Acquisition System3名
● 指導学生の表彰・受賞
1-
Student NameShintaro ToguchiStudent affiliation東京大学Awardthe 2017 RADECS sponsorshipDate2017.10
● 指導学生の顕著な論文
12-
Student nameHagimoto YsuyukiStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)Y. Hagimoto, H. Fujioka, M. Oshima , and K. Hirose, Applied Physics Letters, 77(25), pp. 4175-4177 (2000)TitleCharacterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurementsDOIhttp://doi.org/10.1063/1.1334657
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Student nameEmoto TakashiStudent affiliation名古屋大学Author(s), journal, volume number, pagination (year of publication)T. Emoto,, K. Akimoto, A. Ichimiya, K. Hirose, Applied Surface Science, 190(1-4), pp. 113-120 (2002)TitleStrain due to nickel diffusion into hydrogen-terminated Si(1 1 1) surfaceDOIhttps://doi.org/10.1016/S0169-4332(01)00852-2
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Student nameTalahashi KensukeStudent affiliation武蔵工業大学Author(s), journal, volume number, pagination (year of publication)K. Takahashi, H. Nohira, K. Hirose, and T. Hattori, Applied Physics Letters 83(16), pp. 3422-3424 (2003)TitleAccurate determination of SiO2 film thickness by x-ray photoelectron spectroscopyDOIhttps://doi.org/10.1063/1.1616204
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Student nameYanagawa YoshimitsuStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)Y. Yanagawa, K. Hirose, H. Saito, D. Kobayashi, S. Fukuda, S. Ishii, D. Takahashi, K. Yamamoto, and Y. Kuroda, IEEE Transactions on Nuclear Science, 53 (6) pp. 3575-3578 (2006)TitleDirect measurement of SET pulse widths in 0.2-μm SOI logic cells irradiated by heavy ions
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Student nameMakino TakahiroStudent affiliation総合研究大学院大学Author(s), journal, volume number, pagination (year of publication)T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, and T. Ohshima, IEEE Transactions on Nuclear Science, 56 (1) pp. 202-207 (2009)TitleLET dependence of single event transient pulse-widths in SOI logic cellDOIhttps://doi.org/10.1109/TNS.2008.2009054
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Student nameTsugawa KazuoStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)K. Tsugawa, H. Noda, K. Hirose, and H. Kawarada, Physical Review B, 81 pp. 045303-1-0045303-11 (2010)TitleSchottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamondDOIhttps://doi.org/10.1103/PhysRevB.81.045303
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Student nameChikada ShunsukeStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)S. Chikada, K. Hirose, and T. Yamamoto, Japanese Journal of Applied Physics, 49 pp. 091502-1-091502-3 (2010)TitleAnalysis of local environment of Fe ions in hexagonal BaTiO3DOIhttps://doi.org/133.74.120.63 on 04/02/2021
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Student nameKanamori HarutoStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)H. Kanamori, T. Yoshioka, K. Hirose, and T. Yamamoto, Journal of Electron Spectroscopy and Related Phenomena, 185 pp. 129-132 (2012)TitleDetermination of valence state of Mn ions in Pr1-xAxMnO3-δ (A = Ca, Sr) by Mn-L3 X-ray absorption near-edge structure analysisDOIhttps://doi.org/10.1016/j.elspec.2012.03.003
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Student nameMotoki KeisukeStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)K. Motoki, Y. Miyazawa, D. Kobayashi, M. Ikegami, T. Miyasaka, T. Yamamoto, and K. Hirose, Journal of Applied Physics, 121 (8) pp. 085501-1-085501-4 (2017)TitleDegradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement methodDOIhttps://doi.org/10.1063/1.4977238
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Student nameItsuji HiroakiStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)H. Itsuji, D. Kobayashi, O. Kawasaki, D. Matsuura, T. Narita, M. Kato, S. Ishii, K. Masukawa, and K. Hirose, IEEE Transactions on Nuclear Science, 65 (1) pp. 346-353 (2018)TitleLaser visualization of the development of long line-type multi-cell upsets in back-biased SOI SRAMsDOIhttps://doi.org/10.1109/TNS.2017.2776169
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Student nameYamaguchi KikouStudent affiliation早稲田大学Author(s), journal, volume number, pagination (year of publication)K. Yamaguchi, D. Kobayashi, T. Yamamoto, and K. Hirose, Physica B, 532 pp. 99-102 (2018)TitleTheoretical investigation of the breakdown electric field of SiC polymorphsDOIhttps://doi.org/10.1016/j.physb.2017.03.042
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Student nameChung Chin-HanStudent affiliation東京大学Author(s), journal, volume number, pagination (year of publication)C-H. Chung, D. Kobayashi, and K. Hirose, IEEE Transactions on Device and Materials Reliability, 18 (4) pp. 574-582 (2018)TitleResistance-based modeling for soft errors in SOI SRAMs caused by radiation-induced potential perturbation under the BOXDOIhttps://doi.org/10.1109/TDMR.2018.2873220
● 専任大学名
2-
Affiliation (university)総合研究大学院大学(SOKENDAI)
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Affiliation (university)東京大学(University of Tokyo)
● 所属する所内委員会
8-
ISAS Committee電子部品デバイス・電源グループ
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ISAS Committee宇宙科学技術・専門統括
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ISAS Committee宇宙科学基盤技術統括
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ISAS Committee宇宙機応用工学研究系
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ISAS Committee運営協議会委員
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ISAS Committee知財委員
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ISAS Committee研究所会議構成員
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ISAS Committee宇宙工学委員会委員