Curriculum Vitaes

Kazuyuki Hirose

  (廣瀬 和之)

Profile Information

Affiliation
Professor, Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency
Degree
(BLANK)(Waseda University)
(BLANK)

J-GLOBAL ID
200901096979972445
researchmap Member ID
1000192906

Education

 2

Papers

 61

Misc.

 284
  • 野平博司, 廣瀬和之, 高橋健介, 服部建雄
    シリコンテクノロジー, (9) 24-25, 1999  
  • 廣瀬和之, 坂野公彦, 野平博司, 服部建雄
    シリコンテクノロジー, (12) 18-19, 1999  
  • 高橋健介, 廣瀬和之, 八木朋之, 野平博司, 服部健雄
    極薄シリコン酸化膜の形成・評価・信頼性(第4回研究会), (AP992204) 271-274, 1999  
  • 廣瀬和之
    応用物理学会結晶工学分科会第110回研究会テキスト, (6/3) 43-50, 1999  
  • 廣瀬和之
    電子情報通信学会論文誌 C-1, J83-C-1(1) 1-6, 1999  
  • K. Takahashi, H. Nohira, K. Hiorse, T. Hattori
    The Proceedings of 1st International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, 39-40, 1999  
  • K. Hirose, H. Nohira, T. Koike, K. Sakano, T. Hattori
    Physical Review B, 59(8) 5617-5621, 1999  
  • K. Takahashi, H. Nohira, K. Hiorse, T. Hattori
    Proceedings of 1st International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology, 39-40, 1999  
  • K. Hirose, H. Nohira, T. Koike, K. Sakano, T. Hattori
    Physical Review B, 59(8) 5617-5621, 1999  
  • M Uda, Y Nakagawa, T Yamamoto, M Kawasaki, A Nakamura, T Saito, K Hirose
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 88 767-771, Mar, 1998  
    Aluminum surface freshly shaven with a steel knife showed significant changes in work functions from 3.25 to 3.60 eV within one day. Successive changes of the work functions were measured in air using the open counter. XPS spectra showed no change fundamentally when the fresh Al surface was exposed to air for 1 min and 24 h. Molecular orbital calculations by use of the DV-X alpha method predicted an appearance of an additional local density of state near the Fermi edge when an Al-Al distance becomes large. Based on the experimental results and calculations, we proposed formation of an interface between an Al matrix and a surface oxide or oxyhydroxide, which has a stress induced density of state. This state appears at the beginning of air exposure and disappears after the lapse of time because such stress is released after rearrangement of surface and interface structures. (C) 1998 Elsevier Science B.V.
  • C Matsumoto, T Takahashi, K Takizawa, R Ohno, T Ozaki, K Mori
    1997 IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD, VOLS 1 & 2, 569-573, 1998  
    We report the significant improvement of the spectral properties of a cadmium telluride (CdTe) detector. With the use of a high quality CdTe crystal, we formed a high Schottky barrier for the holes on a CdTe surface by using a low work-function metal, indium. With a 2x2 mm(2) detector at a thickness of 0.5 mm, the leakage current is measured to be 0.7 nA at room temperature (20 degrees C) and below 1 pA at 70 degrees C for 400 V bias voltage. The low leakage current of the detector allows us to operate the detector at a higher bias voltage than the previous CdTe detector. The energy resolution we achieved at room temperature is 1.1-2.5 keV FWHM from the energy range of 2 keV to 150 keV at 20 degrees C without any charge-loss correction electronics. At -70 degrees C. we obtained an energy resolution of 1.0 keV FWHM at 122 keV and 2.1 keV FWHM at 662 keV.
  • A. Hanta, K. Hirose, T. Yamamoto, M. Uda
    Theoretical analysis of an XPS spectrum of Al/Si interface, 110-112, 1998  
  • K Hirose, H Nohira, T Koike, T Aizaki, T Hattori
    APPLIED SURFACE SCIENCE, 123 542-545, Jan, 1998  
    Detailed changes in valence band spectra of ultra-thin SiO2 at initial stages of oxidation are revealed by high resolution X-ray photoelectron spectroscopy. Comparisons of the experimental data with molecular orbital calculations deduce the transition structure near the SiO2/Si interfaces. (C) 1998 Elsevier Science B.V.
  • C Matsumoto, T Takahashi, K Takizawa, R Ohno, T Ozaki, K Mori
    1997 IEEE NUCLEAR SCIENCE SYMPOSIUM - CONFERENCE RECORD, VOLS 1 & 2, 3446 569-573, 1998  
    We report the significant improvement of the spectral properties of a cadmium telluride (CdTe) detector. With the use of a high quality CdTe crystal, we formed a high Schottky barrier for the holes on a CdTe surface by using a low work-function metal, indium. With a 2x2 mm(2) detector at a thickness of 0.5 mm, the leakage current is measured to be 0.7 nA at room temperature (20 degrees C) and below 1 pA at 70 degrees C for 400 V bias voltage. The low leakage current of the detector allows us to operate the detector at a higher bias voltage than the previous CdTe detector. The energy resolution we achieved at room temperature is 1.1-2.5 keV FWHM from the energy range of 2 keV to 150 keV at 20 degrees C without any charge-loss correction electronics. At -70 degrees C. we obtained an energy resolution of 1.0 keV FWHM at 122 keV and 2.1 keV FWHM at 662 keV.
  • A. Hanta, K. Hirose, T. Yamamoto, M. Uda
    Bulletin of the Society for Discrete Variational Xa, 110-112, 1998  
  • K Hirose, H Nohira, T Koike, T Aizaki, T Hattori
    APPLIED SURFACE SCIENCE, 123 542-545, Jan, 1998  
    Detailed changes in valence band spectra of ultra-thin SiO2 at initial stages of oxidation are revealed by high resolution X-ray photoelectron spectroscopy. Comparisons of the experimental data with molecular orbital calculations deduce the transition structure near the SiO2/Si interfaces. (C) 1998 Elsevier Science B.V.
  • 廣瀬和之
    信学技報 (Technical Report of IEICE), ED97-65(1997-07) 1-6, 1997  
  • S. Miyazaki, T. Okumura, Y Miura, K. Hirose
    Microscopy and Microanalysis, 378-379, 1996  
  • S. Tsukamoto, T. Iijima, A. Yokozawa, K. Hirose, K. Tsunenari, A. Ishitani
    Advanced Metallization and Interconnect Systems for ULSI Applications, V-12 219-223, 1996  
  • Y Miura, K Hirose
    JOURNAL OF APPLIED PHYSICS, 79(1) 559-561, Jan, 1996  
    Thermally induced reactions at SiO2/Al interfaces are investigated by cross-sectional transmission electron microscopy. For the SiO2/Al interfaces fabricated by chemical vapor deposition of SiO2 on polycrystalline Al films, precipitates of reduced Si as the reaction products are observed in the Al films and along the SiO2/Al interfaces, after annealing at 500 degrees C for more than 2 h. On the other hand, the interfaces fabricated on the single-Al(111) films show no precipitation even after 4 h of annealing. The differences in tbe interfacial reactivities are discussed in relation to the existence of grain boundaries and Al film orientations. (C) 1996 American Institute of Physics.
  • S. Miyazaki, T. Okumura, Y Miura, K. Hirose
    Microscopy and Microanalysis, 378-379, 1996  
  • S. Tsukamoto, T. Iijima, A. Yokozawa, K. Hirose, K. Tsunenari, A. Ishitani
    Advanced Metallization and Interconnect Systems for ULSI Applications, R. Hauemann and J. Schimitz and H. Komiyama, and K. Tsubouchi (eds), Materials Research Society, V-12 219-223, 1996  
  • S Miyazaki, T Okumura, Y Miura, K Hirose
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1995, 149 307-312, 1996  
    We have measured microscopic distribution of Schottky barrier heights (SBHs) at epitaxial-Al/n-Si(111) interfaces by using scanning internal-photoemission microscopy. The SBH distribution at the interface was homogeneous in the as-deposited state. After annealing, the inhomogeneity of SBH arose and it caused the discrepancy between two SBHs determined by I-V and C-V methods. The thickness distribution of recrystallized p(+)-Si layer, formed during annealing process, was responsible for the distribution of SBH.
  • Y Miura, K Hirose
    JOURNAL OF APPLIED PHYSICS, 79(1) 559-561, Jan, 1996  
    Thermally induced reactions at SiO2/Al interfaces are investigated by cross-sectional transmission electron microscopy. For the SiO2/Al interfaces fabricated by chemical vapor deposition of SiO2 on polycrystalline Al films, precipitates of reduced Si as the reaction products are observed in the Al films and along the SiO2/Al interfaces, after annealing at 500 degrees C for more than 2 h. On the other hand, the interfaces fabricated on the single-Al(111) films show no precipitation even after 4 h of annealing. The differences in tbe interfacial reactivities are discussed in relation to the existence of grain boundaries and Al film orientations. (C) 1996 American Institute of Physics.
  • A YOKOZAWA, K HIROSE, A ISHITANI, M KAMOSHIDA, S HILLENIUS, G GILMER, K RAGHAVACHARI
    JOURNAL OF APPLIED PHYSICS, 77(12) 6345-6349, Jun, 1995  
  • A YOKOZAWA, K HIROSE, A ISHITANI, M KAMOSHIDA, S HILLENIUS, G GILMER, K RAGHAVACHARI
    JOURNAL OF APPLIED PHYSICS, 77(12) 6345-6349, Jun, 1995  
  • K KONUMA, Y ASANO, K HIROSE
    PHYSICAL REVIEW B, 51(19) 13187-13191, May, 1995  
  • Y MIURA, K HIROSE
    JOURNAL OF APPLIED PHYSICS, 77(7) 3554-3556, Apr, 1995  
  • Y MIURA, K HIROSE
    JOURNAL OF APPLIED PHYSICS, 77(7) 3554-3556, Apr, 1995  
  • Y MOCHIZUKI, Y OKAMOTO, A ISHITANI, K HIROSE, T TAKADA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 34(3A) L326-L329, Mar, 1995  
    A schematic reaction mechanism is proposed to explain the Ti/TiN chemical vapor deposition (CVD) process using the TiCl4 molecule as the source species. The scheme can be considered as two successive steps: (I) TiCl4 molecules are adsorbed onto surface reactive sites through concerted electron delocalizations, (II) ambient reducing agents such as H-2 or NH3 reactively eliminate Cl atoms from Ti atoms in the form of HCl. Preliminary molecular orbital (MO) calculations indicate that step (I) is an energetically easy process. Conversely, step (II) is expected to be the rate-determining process with a considerable activation energy. As a whole, the characteristics of resultant CVD films (e.g., the conformality) are probably controlled not by the TiCl4-adsorption step (I) but by the Cl elimination step (II).
  • Y MOCHIZUKI, Y OKAMOTO, A ISHITANI, K HIROSE, T TAKADA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 34(3A) L326-L329, Mar, 1995  
    A schematic reaction mechanism is proposed to explain the Ti/TiN chemical vapor deposition (CVD) process using the TiCl4 molecule as the source species. The scheme can be considered as two successive steps: (I) TiCl4 molecules are adsorbed onto surface reactive sites through concerted electron delocalizations, (II) ambient reducing agents such as H-2 or NH3 reactively eliminate Cl atoms from Ti atoms in the form of HCl. Preliminary molecular orbital (MO) calculations indicate that step (I) is an energetically easy process. Conversely, step (II) is expected to be the rate-determining process with a considerable activation energy. As a whole, the characteristics of resultant CVD films (e.g., the conformality) are probably controlled not by the TiCl4-adsorption step (I) but by the Cl elimination step (II).
  • 菊田邦子, 廣瀬和之
    LSI配線における原子輸送・応力問題 第2回研究会予稿集, 43-44, 1995  
  • S. Miyazaki, T. Okumura, Y. Miura, K. Hirose
    Proceedings of The 7th International Conference on Indium Phosphide and Relalted Materials, 1995  
  • M Makabe, K Hirose, H Ishikawa, H One, A Ishitani, J Mizuki
    BEAM-SOLID INTERACTIONS FOR MATERIALS SYNTHESIS AND CHARACTERIZATION, 354 455-460, 1995  
  • S. Miyazaki, T. Okumura, Y. Miura, K. Hirose
    Proceedings of The 7th International Conference on Indium Phosphide and Relalted Materials, 1995  
  • Y MIURA, S FUJIEDA, K HIROSE
    PHYSICAL REVIEW B, 50(7) 4893-4896, Aug, 1994  
    Schottky-barrier height (SBH) for intimate Al/Si contacts is investigated in relation to the interfacial crystallographic alignment, which is observed by transmission-electron microscopy. Epitaxial and rotational Al films are obtained by low-temperature molecular-beam epitaxy on both Si(lll) and (100) surfaces, by controlling the surface structures. The SBH measurements for n- and p-type samples reveal that the absence of epitaxial alignment at the interfaces significantly lowers the Fermi-level pinning position for the contacts on both (111) and (100) surfaces.
  • MIURA Yoshinao, FUJIEDA Shinji, HIROSE Kazuyuki
    J. Surf. Sci. Soc. Jpn., 15(9) 591-597, 1994  
  • S. Miyazaki, T. Okumura, Y. Miura, K. Hirose
    Contorol of Semiconductor Interfaces, I. Ohdomari, M. Oshima, and A. Hiraki (eds), Elsevier, 255-260, 1994  
  • S MIYAZAKI, T OKUMURA, Y MIURA, K AIZAWA, K HIROSE
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 135(135) 361-364, 1994  
    The spatial distribution of Schottky barrier height (SBH) at epitaxial Al contacts on Si(111) substrates was investigated by using the scanning internal-photoemission microscopy. We show that low-SBH regions aligning in a certain direction appeared at the annealed Al/Si(111) interface.
  • K HIROSE, K KIKUTA, T YOSHIDA
    INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, 551-560, 1994  
  • M. Makabe, K. Hirose, H. Ishikawa, H. Ono, A. Ishitani, J. Mizuki
    Beam-Solid Interactions for Materials Synthesis and Characterization, 354 455-460, 1994  
  • S. Miyazaki, T. Okumura, Y. Miura, K. Hirose
    Control of Semiconductor Interfaces, I. Ohdomari, M. Oshima, and A. Hiraki (eds), Elsevier, 255-260, 1994  
  • Y. Miura, S. Fujieda, K. Hirose
    Contorol of Semiconductor Interfaces, I. Ohdomari, M. Oshima, and A. Hiraki (eds), Elsevier, 27-32, 1994  
  • Y MIURA, S FUJIEDA, K HIROSE
    APPLIED PHYSICS LETTERS, 62(15) 1751-1753, Apr, 1993  
    Al films were formed by low temperature molecular beam epitaxy on Si(111) surfaces. The substrates were pretreated in a NH4F solution to obtain a nearly atomically flat surface by anisotropic etching. Planview transmission electron microscopy observation demonstrates that single-crystal Al films are successfully grown on the 7 X 7 surface structure. Such single-crystal growth is arrested on a disordered or hydrogen-terminated surface.
  • S. Miyazaki, T. Okumura, Y. Miura, K. Aizawa, K. Hirose
    Institute of Physics Conference Series, 135 361-364, 1993  
  • Y MIURA, K HIROSE, K AIZAWA, N IKARASHI, H OKABAYASHI
    APPLIED PHYSICS LETTERS, 61(9) 1057-1059, Aug, 1992  
    Epitaxial Al contacts on Si(111) are fabricated by electron beam evaporation at various substrate temperatures around 250-degrees-C. They are observed by high-resolution transmission electron microscopy. Schottky barrier heights (SBHs) of the contacts are measured using current-voltage and capacitance-voltage methods. In the case of single-crystalline Al film, the SBH does not change and its spatial distribution remains homogeneous up to an annealing temperature of 550-degrees-C. In contrast with this, for an epitaxial Al film containing grain boundaries, the spatial distribution of the SBH becomes inhomogeneous above 400-degrees-C. This is attributed to Si diffusion along the grain boundaries in the Al film.
  • K HIROSE, A UCHIYAMA, T NOGUCHI, M UDA
    APPLIED SURFACE SCIENCE, 56-8(Pt A) 11-14, Mar, 1992  
    The energy distributions of the occupied surface states of GaAs(001) surfaces with several kinds of surface superstructure are measured using photoemission yield spectroscopy. The surfaces are prepared by molecular beam epitaxy. The surface states are found to change in both distribution and density depending on the surface superstructure and the surface preparation conditions. It is concluded that not all observed surface states originate from ordered surface atomic structures.
  • AKIMOTO Koichi, HIROSE Kazuyuki, MIZUKI Jun'ichiro, MATSUI Junji
    Nihon Kessho Gakkaishi, 34(3) 178-185, 1992  
    Surface superstructures (reconstructed structures) have been observed by many techniques. However, it has not been easy to confirm that a superstructure does exist at an interface between two solid layers. The article reports superstructures at semiconductor interfaces studied by a grazing incidence X-ray diffraction technique with use of synchrotron radiation. At metal-semiconductor interfaces, different superstructures give different Schottky-barrier-height values. Superstructures are also found to exist at insulator-semiconductor interfaces fabricated by the metalorgamc chemical vapor deposition (MOCVD) method. In addition, a boron-induced superstructure is found to exist even at the interface between an epitaxial Si layer and a Si (111) substrate.
  • Y. Ikeda, K. Koshimoto, K. Hirose, Y. Numasawa
    Technical Digest (Cat. No.92CH3211-0), (92CH3211-0) 289-292, 1992  

Books and Other Publications

 8

Presentations

 34

Professional Memberships

 1

Research Projects

 16

● 指導学生等の数

 1
  • Fiscal Year
    2018年度(FY2018)
    Doctoral program
    東大生 1名
    Master’s program
    東大生 2名
    Students under Commissioned Guidance Student System
    2名
    Students under Skills Acquisition System
    3名

● 指導学生の表彰・受賞

 1
  • Student Name
    Shintaro Toguchi
    Student affiliation
    東京大学
    Award
    the 2017 RADECS sponsorship
    Date
    2017.10

● 指導学生の顕著な論文

 12
  • Student name
    Hagimoto Ysuyuki
    Student affiliation
    東京大学
    Author(s), journal, volume number, pagination (year of publication)
    Y. Hagimoto, H. Fujioka, M. Oshima , and K. Hirose, Applied Physics Letters, 77(25), pp. 4175-4177 (2000)
    Title
    Characterizing carrier-trapping phenomena in ultrathin SiO2 films by using the x-ray photoelectron spectroscopy time-dependent measurements
    DOI
    http://doi.org/10.1063/1.1334657
  • Student name
    Emoto Takashi
    Student affiliation
    名古屋大学
    Author(s), journal, volume number, pagination (year of publication)
    T. Emoto,, K. Akimoto, A. Ichimiya, K. Hirose, Applied Surface Science, 190(1-4), pp. 113-120 (2002)
    Title
    Strain due to nickel diffusion into hydrogen-terminated Si(1 1 1) surface
    DOI
    https://doi.org/10.1016/S0169-4332(01)00852-2
  • Student name
    Talahashi Kensuke
    Student affiliation
    武蔵工業大学
    Author(s), journal, volume number, pagination (year of publication)
    K. Takahashi, H. Nohira, K. Hirose, and T. Hattori, Applied Physics Letters 83(16), pp. 3422-3424 (2003)
    Title
    Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy
    DOI
    https://doi.org/10.1063/1.1616204
  • Student name
    Yanagawa Yoshimitsu
    Student affiliation
    東京大学
    Author(s), journal, volume number, pagination (year of publication)
    Y. Yanagawa, K. Hirose, H. Saito, D. Kobayashi, S. Fukuda, S. Ishii, D. Takahashi, K. Yamamoto, and Y. Kuroda, IEEE Transactions on Nuclear Science, 53 (6) pp. 3575-3578 (2006)
    Title
    Direct measurement of SET pulse widths in 0.2-μm SOI logic cells irradiated by heavy ions
  • Student name
    Makino Takahiro
    Student affiliation
    総合研究大学院大学
    Author(s), journal, volume number, pagination (year of publication)
    T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, and T. Ohshima, IEEE Transactions on Nuclear Science, 56 (1) pp. 202-207 (2009)
    Title
    LET dependence of single event transient pulse-widths in SOI logic cell
    DOI
    https://doi.org/10.1109/TNS.2008.2009054
  • Student name
    Tsugawa Kazuo
    Student affiliation
    早稲田大学
    Author(s), journal, volume number, pagination (year of publication)
    K. Tsugawa, H. Noda, K. Hirose, and H. Kawarada, Physical Review B, 81 pp. 045303-1-0045303-11 (2010)
    Title
    Schottky barrier heights, carrier density, and negative electron affinity of hydrogen-terminated diamond
    DOI
    https://doi.org/10.1103/PhysRevB.81.045303
  • Student name
    Chikada Shunsuke
    Student affiliation
    早稲田大学
    Author(s), journal, volume number, pagination (year of publication)
    S. Chikada, K. Hirose, and T. Yamamoto, Japanese Journal of Applied Physics, 49 pp. 091502-1-091502-3 (2010)
    Title
    Analysis of local environment of Fe ions in hexagonal BaTiO3
    DOI
    https://doi.org/133.74.120.63 on 04/02/2021
  • Student name
    Kanamori Haruto
    Student affiliation
    早稲田大学
    Author(s), journal, volume number, pagination (year of publication)
    H. Kanamori, T. Yoshioka, K. Hirose, and T. Yamamoto, Journal of Electron Spectroscopy and Related Phenomena, 185 pp. 129-132 (2012)
    Title
    Determination of valence state of Mn ions in Pr1-xAxMnO3-δ (A = Ca, Sr) by Mn-L3 X-ray absorption near-edge structure analysis
    DOI
    https://doi.org/10.1016/j.elspec.2012.03.003
  • Student name
    Motoki Keisuke
    Student affiliation
    早稲田大学
    Author(s), journal, volume number, pagination (year of publication)
    K. Motoki, Y. Miyazawa, D. Kobayashi, M. Ikegami, T. Miyasaka, T. Yamamoto, and K. Hirose, Journal of Applied Physics, 121 (8) pp. 085501-1-085501-4 (2017)
    Title
    Degradation of CH3NH3PbI3 perovskite due to soft x-ray irradiation as analyzed by an x-ray photoelectron spectroscopy time-dependent measurement method
    DOI
    https://doi.org/10.1063/1.4977238
  • Student name
    Itsuji Hiroaki
    Student affiliation
    東京大学
    Author(s), journal, volume number, pagination (year of publication)
    H. Itsuji, D. Kobayashi, O. Kawasaki, D. Matsuura, T. Narita, M. Kato, S. Ishii, K. Masukawa, and K. Hirose, IEEE Transactions on Nuclear Science, 65 (1) pp. 346-353 (2018)
    Title
    Laser visualization of the development of long line-type multi-cell upsets in back-biased SOI SRAMs
    DOI
    https://doi.org/10.1109/TNS.2017.2776169
  • Student name
    Yamaguchi Kikou
    Student affiliation
    早稲田大学
    Author(s), journal, volume number, pagination (year of publication)
    K. Yamaguchi, D. Kobayashi, T. Yamamoto, and K. Hirose, Physica B, 532 pp. 99-102 (2018)
    Title
    Theoretical investigation of the breakdown electric field of SiC polymorphs
    DOI
    https://doi.org/10.1016/j.physb.2017.03.042
  • Student name
    Chung Chin-Han
    Student affiliation
    東京大学
    Author(s), journal, volume number, pagination (year of publication)
    C-H. Chung, D. Kobayashi, and K. Hirose, IEEE Transactions on Device and Materials Reliability, 18 (4) pp. 574-582 (2018)
    Title
    Resistance-based modeling for soft errors in SOI SRAMs caused by radiation-induced potential perturbation under the BOX
    DOI
    https://doi.org/10.1109/TDMR.2018.2873220

● 専任大学名

 2
  • Affiliation (university)
    総合研究大学院大学(SOKENDAI)
  • Affiliation (university)
    東京大学(University of Tokyo)

● 所属する所内委員会

 8
  • ISAS Committee
    電子部品デバイス・電源グループ
  • ISAS Committee
    宇宙科学技術・専門統括
  • ISAS Committee
    宇宙科学基盤技術統括
  • ISAS Committee
    宇宙機応用工学研究系
  • ISAS Committee
    運営協議会委員
  • ISAS Committee
    知財委員
  • ISAS Committee
    研究所会議構成員
  • ISAS Committee
    宇宙工学委員会委員