Profile Information
- Affiliation
- Associate Professor, Institute of Space and Astronautical Science, Department of Spacecraft Engineering, Japan Aerospace Exploration AgencyAssociate Professor, The Graduate School of Engineering, Department of Electrical Engineering and Information Systems, The University of Tokyo
- Degree
- D.S.(Mar, 2005, The University of Tokyo)
- Researcher number
- 90415894
- ORCID ID
https://orcid.org/0000-0002-0140-8820- J-GLOBAL ID
- 200901096574214055
- researchmap Member ID
- 5000089715
- External link
Profile
What? I'm studying space electron devices, especially forcusing on semiconductor-chip malfunctions caused by cosmic rays called "soft errors." I run my laboratory as an associate professor at Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA) and the Department of Electrical Engineering, Graduate School of Engineering, The University of Tokyo. This portal also serves as the website for my laboratory.
How? We conduct experiments to discover new phenomena and perfoming simulations to analyze them, but what we are focusing on most is "modeling," writing phenomena in simple equations. We are now mainly focusing on developing "soft-error reliability equations," consisited of the following three equations.
Why? We use accelerators to reproduce cosmic rays. We expose semiconductor chips to them and examine what happens. This “expose and examine” approach is the standard method and is indispensable, especially for reliability assurance of semicondctor chips. However, accelerators are limited in number, so accelerator tests are extremely valuable. We often repeat tests; for example, “what happens if we lower the voltage fed to semiconductor chips a bit from the earlier experiment?” Although those condition changes are certainly meaningful, I feel it’s a bit waste to repeat almost the same tests over and over in accelerator experiments. If we can describe how each parameter affects the result with simple equations, we can say something about the results much more without actually irradiating chips. We will then be able to use the valuable accelerator time for other purposes. We would also be able to cut down the time to wait for a chance of accelerator testing to inspect chips we just made. Our goal is zero! We’re trying to create "magical" equations that allow us to say, without even one acclerator exposure, “This chip is fine!”
Research Interests
12Research Areas
1Major Research History
8Major Education
2Committee Memberships
1-
2013 - Mar, 2020
Awards
9Papers
47-
IEEE Transactions on Nuclear Science, 2026 Peer-reviewedLead authorCorresponding authorPredicting the single-event upset (SEU) rates of semiconductor devices is essential for their deployment in space and terrestrial cosmic-ray environments. Although various SEU-rate equations were derived for this purpose from different approximations of heavy-ion SEU cross-section curves, no previous studies used an exponential function approximation. This study aims to derive an SEU-rate equation from this approximation and evaluate its validity. The derived equation has a simple closed-form comprising only three physically-intuitive parameters. It shows the potential to predict the SEU rates of a device for galactic cosmic-rays (heavy-ion radiation) on the geosynchronous orbit and atmospheric cosmic-rays (neutron radiation) on the ground in a unified manner, simply by replacing a coefficient. Testing the equation with experimental data of devices fabricated in 250 to 7nm technology nodes shows that our equation can predict their SEU rates within a factor of 2 for the galactic cosmic-rays and 3 for the atmospheric cosmic-rays as accurate as the famous Petersen’s figure-of-merit formula. A further exploration of this similarity between our equation and Petersen’s formula indicates that they are not merely similar but rather identical. The current Petersen’s formula relies on heuristic calibrations to enhance its prediction accuracy. These calibrations can be explained through the exponential-function approximation.
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IEEE Transactions on Nuclear Science, 70(4) 707-713, Apr, 2023 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Nuclear Science, 68(3) 232-240, Mar, 2022 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Nuclear Science, 68(6) 1222-1227, 2021 Peer-reviewed
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IEEE Transactions on Nuclear Science, 68(2) 124-148, 2021 Peer-reviewedLead authorCorresponding authorThe history of integrated circuit (IC) development is another record of human challenges involving space. Efforts have been made to protect ICs from sudden malfunctions due to single-event effects (SEEs). These effects are triggered by only a single strike of particle radiation, such as an α-ray or cosmic ray, originating from our solar activity and galactic events including supernovas. This article explores how SEEs have evolved along with the progress in complementary metal-oxide-semiconductor (CMOS) digital IC technology, or device scaling, from the early micrometer-scale generations to the current nanometer-scale generations. For this purpose, focusing on basic digital elements, that is, inverters and static random access memories (SRAMs), this study collected more than 100 sets of data on four characteristic parameters of single-event upsets (SEUs) and single-event transients (SETs), both of which are undesired flips in digital logic states. The results show that all the examined parameters, such as the SEU critical charge, decrease with the device feature size. Analysis involving structure classification, such as bulk versus silicon-on-insulator (SOI) substrates and planar versus fin channels, reveals relationships between the examined SEE parameters and other device features such as the power supply voltage. All the data collected in this survey are explicitly given in tables for future exploration of IC reliability.
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Japanese Journal of Applied Physics, 59(10) 106501-106501, Oct 1, 2020 Peer-reviewed
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Quantum Beam Science, 4(1) 15, Mar 4, 2020 Peer-reviewed
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IEEE Transactions on Nuclear Science, 67(1) 328-335, Jan, 2020 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Device and Materials Reliability, 19(4) 751-756, Dec, 2019 Peer-reviewed
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IEEE Transactions on Nuclear Science, 66(1) 155-162, Jan, 2019 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Device and Materials Reliability, 18(4) 574-582, Dec, 2018 Peer-reviewed
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IEEE Transactions on Nuclear Science, 65(8) 1900-1907, Aug, 2018 Peer-reviewed
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Physica B: Condensed Matter, 532 99-102, Mar, 2018 Peer-reviewed
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IEEE Transactions on Nuclear Science, 65(1) 346-353, Jan, 2018 Peer-reviewed
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IEEE Transactions on Nuclear Science, 65(1) 523-532, Jan, 2018 Peer-reviewedLead authorCorresponding author
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Japanese Journal of Applied Physics, 56(8) 0802A5-0802A5, Aug 1, 2017 Peer-reviewed
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Japanese Journal of Applied Physics, 56(8) 0802B3-0802B3, Aug 1, 2017 Peer-reviewed
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Japanese Journal of Applied Physics, 56(8) 0802B4-0802B4, Aug 1, 2017 Peer-reviewedLead authorCorresponding author
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Japanese Journal of Applied Physics, 56(4S) 04CD16-04CD16, Apr 1, 2017 Peer-reviewed
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Journal of Applied Physics, 121(8) 085501-085501, Feb 28, 2017 Peer-reviewed
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IEEE Transactions on Nuclear Science, 64(1) 406-414, Jan, 2017 Peer-reviewed
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IEEE Transactions on Nuclear Science, 61(4) 1710-1716, Aug, 2014 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Nuclear Science, 59(4) 707-713, Aug, 2012 Peer-reviewed
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Japanese Journal of Applied Physics, 51 04DA07-04DA07, Apr 20, 2012 Peer-reviewed
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IEEE Transactions on Electron Devices, 58(8) 2362-2370, Aug, 2011 Peer-reviewed
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IEEE Transactions on Nuclear Science, 58(3) 800-807, Jun, 2011 Peer-reviewedLead authorCorresponding author
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 636(1) S31-S36, Apr, 2011 Peer-reviewed
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Journal of The Electrochemical Society, 158(5) R27-R36, 2011 Peer-reviewed
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IEEE Transactions on Nuclear Science, 57(4) 1811-1819, Aug, 2010 Peer-reviewed
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IEEE Transactions on Nuclear Science, 56(6) 3180-3184, Dec, 2009 Peer-reviewed
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IEEE Transactions on Nuclear Science, 56(6) 3043-3049, Dec, 2009 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Nuclear Science, 56(4) 1958-1963, Aug, 2009 Peer-reviewed
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IEEE Transactions on Nuclear Science, 56(4) 2014-2020, Aug, 2009 Peer-reviewed
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IEEE Transactions on Nuclear Science, 56(1) 202-207, Feb, 2009 Peer-reviewed
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IEEE Transactions on Nuclear Science, 55(6) 2872-2879, Dec, 2008 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Nuclear Science, 55(6) 2842-2853, Dec, 2008 Peer-reviewed
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Applied Physics Letters, 93(19) 193503, Nov 10, 2008 Peer-reviewed
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IEEE Transactions on Nuclear Science, 55(4) 1947-1952, Aug, 2008 Peer-reviewed
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IEEE Transactions on Nuclear Science, 54(6) 2347-2354, Dec, 2007 Peer-reviewedLead authorCorresponding author
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Journal of Physics: Conference Series, 83 012011-012011, Oct 1, 2007 Peer-reviewed
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IEEE Transactions on Nuclear Science, 54(4) 1037-1041, Aug, 2007 Peer-reviewedLead authorCorresponding author
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Time-domain component analysis of heavy-ion-induced transient currents in fully-depleted SOI MOSFETsIEEE Transactions on Nuclear Science, 53(6) 3372-3378, Dec, 2006 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Nuclear Science, 53(6) 3575-3578, Dec, 2006 Peer-reviewed
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Applied Physics Letters, 89(15) 154103-154103, Oct 9, 2006 Peer-reviewed
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IEEE Transactions on Electron Devices, 52(10) 2188-2197, Oct, 2005 Peer-reviewedLead authorCorresponding author
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Journal of Micromechanics and Microengineering, 14(9) S76-S81, Sep 1, 2004 Peer-reviewedLead authorCorresponding author
Major Misc.
6-
JSAP Review, 2023, Sep 2, 2023 InvitedLead authorCorresponding author
Major Books and Other Publications
3Presentations
214-
International Display Workshops (IDW) Invited
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IEEE International Reliability Physics Symposium (IRPS)Presentation 4C.4
Major Teaching Experience
2Professional Memberships
5Industrial Property Rights
5Major Academic Activities
18-
Panel moderator, Session chair, etc., Planning/Implementing academic research(San Antonio, TX, USA), Jul, 2019
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Supervision (editorial), Peer review2015 - 2017
Media Coverage
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IEEE, @Press, Jul 31, 2023 Internet
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D. Kobayashi, K. Hirose, and H. Saito, SPIE Newsroom, Jun, 2013 Internet
● 専任大学名
1-
Affiliation (university)総合研究大学院大学(SOKENDAI)