Profile Information
- Affiliation
- Associate Professor, Institute of Space and Astronautical Science, Department of Spacecraft Engineering, Japan Aerospace Exploration AgencyAssociate Professor, The Graduate School of Engineering, Department of Electrical Engineering and Information Systems, The University of Tokyo
- Degree
- D.S.(Mar, 2005, The University of Tokyo)
- Researcher number
- 90415894
- ORCID ID
https://orcid.org/0000-0002-0140-8820- J-GLOBAL ID
- 200901096574214055
- researchmap Member ID
- 5000089715
- External link
Profile
What? I'm studying space electron devices, especially forcusing on semiconductor-chip malfunctions caused by cosmic rays called "soft errors." I run my laboratory as an associate professor at Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA) and the Department of Electrical Engineering, Graduate School of Engineering, The University of Tokyo. This portal also serves as the website for my laboratory.
How? We conduct experiments to discover new phenomena and perfoming simulations to analyze them, but what we are focusing on most is "modeling," writing phenomena in simple equations. Right now, we are mainly focusing on developing "soft-error reliability equations," currently consisited of the following three equations (I will skip the details but they are quite simple and physically intuitive).
$ \sigma = \sigma_\infty \exp{\left(-\frac{L_e}{L_\mathrm{eff } }\right)} $
$ \Phi_\mathrm{eff} = \frac{K_\mathrm{eff } }{L_\mathrm{eff}^2}$
$ \lambda = 2K_\mathrm{eff}\frac{\sigma_\infty}{L_e^2}$
Why? We use accelerators to reproduce cosmic rays. We expose semiconductor chips to them and examine what happens. This “expose and examine” approach is the standard method and is indispensable, especially for reliability assurance of semicondctor chips. However, accelerators are limited in number, so accelerator tests are extremely valuable. We often repeat tests; for example, “what happens if we lower the voltage fed to semiconductor chips a bit from the earlier experiment?” Although those condition changes are certainly meaningful, I feel it’s a bit waste to repeat almost the same tests over and over in accelerator experiments. If we can describe how each parameter affects the result with simple equations, we can say something about the results much more without actually irradiating chips. We will then be able to use the valuable accelerator time for other purposes. We would also be able to cut down the time to wait for a chance of accelerator testing to inspect chips we just made. Our goal is zero! We’re trying to create "magical" equations that allow us to say, without even one acclerator exposure, “This chip is fine!”
Research Interests
12Research Areas
1Major Research History
8Major Education
2Committee Memberships
1-
2013 - Mar, 2020
Awards
9Papers
47-
IEEE Transactions on Nuclear Science, 2026 Peer-reviewedLead authorCorresponding authorPredicting the single-event upset (SEU) rates of semiconductor devices is essential for their deployment in space and terrestrial cosmic-ray environments. Although various SEU-rate equations were derived for this purpose from different approximations of heavy-ion SEU cross-section curves, no previous studies used an exponential function approximation. This study aims to derive an SEU-rate equation from this approximation and evaluate its validity. The derived equation has a simple closed-form comprising only three physically-intuitive parameters. It shows the potential to predict the SEU rates of a device for galactic cosmic-rays (heavy-ion radiation) on the geosynchronous orbit and atmospheric cosmic-rays (neutron radiation) on the ground in a unified manner, simply by replacing a coefficient. Testing the equation with experimental data of devices fabricated in 250 to 7nm technology nodes shows that our equation can predict their SEU rates within a factor of 2 for the galactic cosmic-rays and 3 for the atmospheric cosmic-rays as accurate as the famous Petersen’s figure-of-merit formula. A further exploration of this similarity between our equation and Petersen’s formula indicates that they are not merely similar but rather identical. The current Petersen’s formula relies on heuristic calibrations to enhance its prediction accuracy. These calibrations can be explained through the exponential-function approximation.
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IEEE Transactions on Nuclear Science, 70(4) 707-713, Apr, 2023 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Nuclear Science, 68(3) 232-240, Mar, 2022 Peer-reviewedLead authorCorresponding author
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IEEE Transactions on Nuclear Science, 68(6) 1222-1227, 2021 Peer-reviewed
Major Misc.
6-
JSAP Review, 2023, Sep 2, 2023 InvitedLead authorCorresponding author
Major Books and Other Publications
3Presentations
214-
International Workshop on Dielectric Thin Films for Future Electron Devices-Science and Technology (IWDTF)paper P-22 (Refereed)
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International Workshop on Dielectric Thin Films for Future Electron Devices-Science and Technology (IWDTF)paper P-16 (Refereed)
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Conference on Radiation Effects on Components and Systems (RADECS)paper G-1
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応用物理学会シリコンテクノロジー分科会第162回研究集会「大規模・高速・原子レベル計算が可能にする新規モデリング技術」 Invited
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International Conference on Formation of Semiconductor Interfaces (ICFSI)paper ThM-2-OR0
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Micro- and Nanotechnology Sensors, Systems, and Applications V Conference in DSS13 SPIE Defense, Security, and Sensing Symposium Invitedpaper 8725-45
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International Workshop on Radiation Effects on Semicon- ductor Devices for Space Application (RASEDA)paper E-P2
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IEEE International SOI Conference Invited
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MRS-J Academic Symposium
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International Conference on Solid State Devices and Materials (SSDM)paper P-1-7
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Conference on Radiation Effects on Components and Systems (RADECS)paper D-4
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Conference on Radiation Effects on Components and Systems (RADECS)paper A-2
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Conference on Radiation Effects on Components and Systems (RADECS)paper PB-1
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International Conference on the Formation of Semiconductor Interfaces (ICFSI)paper. 17648
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応用物理学会シリコンテクノロジー分科会第137会研究集会「ゲートスタック技術の進展–半導 体昨日界面の特性評価を中心に」
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International Symposium on Advanced Semiconductor-on-insulator Technology and Related Physics (in 219th ECS Meeting) Invitedpaper 1442
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International Conference on Solid-State and Integrated Circuit Technology (ICSICT)paper O01_09
Major Teaching Experience
2Professional Memberships
5Industrial Property Rights
5Major Academic Activities
18-
Panel moderator, Session chair, etc., Planning/Implementing academic research(San Antonio, TX, USA), Jul, 2019
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Supervision (editorial), Peer review2015 - 2017
Media Coverage
8-
IEEE, @Press, Jul 31, 2023 Internet
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D. Kobayashi, K. Hirose, and H. Saito, SPIE Newsroom, Jun, 2013 Internet
● 専任大学名
1-
Affiliation (university)総合研究大学院大学(SOKENDAI)